Archives
Vol. 16 No. 3
Electron devices, circuits and modules
20181016 : LETTER
A novel three-dimensional NAND flash structure for improving the erase performance
Integrated circuits
Integrated circuits
20181034 : LETTER
A memristor-based convolutional neural network with full parallelization architecture
Integrated circuits
20181064 : LETTER
Design of a third-order delta-sigma TDC with error-feedback structure
Energy harvesting devices, circuits and modules
20181074 : LETTER
An improved harmonics detection method based on sliding disrete Fourier transform for three-phase grid-tie inverter system
Integrated circuits
20181075 : LETTER
An exponent-scalable method for very small capacitance spread and large time constant of switched-capacitor integrator
Integrated circuits
20181076 : LETTER
A novel TDC/ADC hybrid reconstruction ROIC for LiDAR
Integrated circuits
20181079 : LETTER
A 10-GS/s 8-bit 4-way interleaved folding ADC in 0.18 µm SiGe-BiCMOS
Microwave and millimeter-wave devices, circuits, and modules
Microwave and millimeter-wave devices, circuits, and modules
20181082 : LETTER
A broadband Doherty power amplifier design by optimizing its load modulation network
Microwave and millimeter-wave devices, circuits, and modules
20181094 : LETTER
Design of broadband power amplifier based on series of continuous inverse modes with phase shift
Integrated circuits
20181104 : LETTER
A hybrid Sigma-Delta modulator with reusable SAR quantizer
Integrated circuits
20181105 : LETTER
An enhanced time-to-digital conversion solution for pre-bond TSV dual faults testing
Integrated circuits
Electron devices, circuits and modules
20181125 : LETTER
InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz fmax and 5.4-V breakdown voltage