IEICE Electronics Express

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ONLINE ISSN:1349-2543

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ELEX Best Paper Award in the year 2023

Integrated circuits

20220558 : LETTER

A 41-GHz 19.4-dBm Psat CMOS Doherty power amplifier for 5G NR applications

Zheng Li, Zixin Chen, Qiaoyu Wang, Junqing Liu, Jian Pang, Atsushi Shirane, Kenichi Okada

 

THz devices, circuits and modules

20230395 : LETTER

Low-noise balanced mixer for 300-GHz band based on Fermi-level managed barrier diode on SiC platform

Hiroshi Ito, Yuma Kawamoto, Takahiro Ohara, Tadao Nagatsuma, Tadao Ishibashi

 

All Best Papers

Archives

Vol. 11 No. 4

Microwave and millimeter wave devices, circuits, and systems

20130939 : LETTER

Accurate relative position indicator for tracking-based position estimation system

Kwang Jin Kim, Byung Hee Son, Bruce Burgess, Sung Wan Bang, Jeong Woo Lee, Ho Hyun Park, Jae Hwa Park, Young Bin Kown, John F. Donegan, Young-Wan Choi

 

Electron devices, circuits, and systems

20130981 : LETTER

A parallel arithmetic array for accelerating compute-intensive applications

Dong Wang, Peng Cao, Yang Xiao

 

Integrated circuits

20131003 : LETTER

A LUT manipulation based intrinsic evolvable system

Kaifeng Zhang, Huanzhang Lu, Weidong Hu, Jian Wang

 

Integrated circuits

20131012 : LETTER

Design of a digital controller for an LED driver with a digital dimming

Wonkyeong Park, Van Ha Nguyen, Kilsoo Seo, Hanjung Song

 

Electron devices, circuits, and systems

20131029 : LETTER

An SET hardened dual-modular majority voter circuit for TMR system

Xiaopeng Liu, Yan Han, Bin Zhang

 

Microwave and millimeter wave devices, circuits, and systems

20131030 : LETTER

A novel approach to pruning the general Volterra series for modeling power amplifiers

Leyu Zhai, Haitao Zhai, Ziwei Zhou, Eryang Zhang, Kai Gao

 

Integrated circuits

20131040 : LETTER

A 1-V recycling current OTA with improved gain-bandwidth and input/output range

Xiao Zhao, Qisheng Zhang, Ming Deng

 

Integrated circuits

 

Integrated circuits

20140051 : LETTER

Effect of charge sharing on SEU sensitive area of 40-nm 6T SRAM cells

Peng Li, Minxuan Zhang, Weicheng Zhang, Zhenyu Zhao, Chao Song, Hua Fan