Call for Nomination for the 2022 ELEX Best Paper Award
The Electronics Society calls for nomination for the ELEX Best Paper Award candidates in 2022.
Active nomination is highly encouraged.
The nomination deadline is January 31, 2023 (Hard Deadline).
Online Nomination Form
Archives
Vol. 11 No. 14
Electron devices, circuits, and systems
20140387 : LETTER
Design and FPGA implementation of time-frequency transforming for stretch processing
Electron devices, circuits, and systems
20140424 : LETTER
Swarm Processor System: hardware process scheduler based energy efficient multi-core system
Integrated circuits
20140432 : LETTER
High performance differential Colpitts VCO with a linearized tuning range using a series resonator
Electron devices, circuits, and systems
20140447 : LETTER
Experimental demonstration of a ferroelectric FET using paper substrate
Integrated circuits
20140454 : LETTER
A fast low power window-opening logic for high speed SAR ADC
Electron devices, circuits, and systems
20140466 : LETTER
An improved memory system simulator based on DRAMSim2
Electron devices, circuits, and systems
20140474 : LETTER
Scalable design of microprogrammed digital FIR filter for sensor processing subsystem
Integrated circuits
20140493 : LETTER
A digital control algorithm for single-phase boost PFC converter with fast dynamic response
Integrated circuits
20140496 : LETTER
A comprehensive comparison between virtual cut-through and wormhole routers for cache coherent Network on-Chips
Integrated circuits
20140504 : LETTER
Temperature properties of the parasitic resistance of through-silicon vias (TSVs) in high-frequency 3-D ICs
Fiber optics, Microwave photonics, Optical interconnection, Photonic signal processing, Photonic integration and systems
20140517 : LETTER
A widely tunable erbium-doped fiber laser using closed loop control
Integrated circuits
Electron devices, circuits, and systems
20140562 : LETTER
Hardware efficient architecture for compressed imaging
Electron devices, circuits, and systems
20140567 : LETTER
Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density
Electron devices, circuits, and systems
20142006 : REVIEW PAPER
Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system