ELEX Best Paper Award in the year 2023

Integrated circuits

20220558 : LETTER

A 41-GHz 19.4-dBm P_sat CMOS Doherty power amplifier for 5G NR applications

Zheng Li, Zixin Chen, Qiaoyu Wang, Junqing Liu, Jian Pang, Atsushi Shirane, Kenichi Okada

THz devices, circuits and modules

20230395 : LETTER

Low-noise balanced mixer for 300-GHz band based on Fermi-level managed barrier diode on SiC platform

Hiroshi Ito, Yuma Kawamoto, Takahiro Ohara, Tadao Nagatsuma, Tadao Ishibashi

All Best Papers

Vol. 16 No. 10

Integrated circuits

20190080 : LETTER

Low-latency semi-systolic architecture for multiplication over finite fields

Kee-Won Kim

Electron devices, circuits and modules

20190098 : LETTER

A high-pass filter based on through-silicon via (TSV)

Fengjuan Wang, Jia Huang, Ningmei Yu

Integrated circuits

20190116 : LETTER

A 1.05-V 62-MHz with 0.12-nW standby power SOTB-65 nm chip of 32-point DCT based on adaptive CORDIC

Duc-Hung Le, Trong-Thuc Hoang, Cong-Kha Pham

Integrated circuits

20190154 : LETTER

Analytic analysis for effects of input initial phase on input-output dynamics of memristor

Wei Hu, Rongshan Wei, Jinbiao Lin

Microwave and millimeter-wave devices, circuits, and modules

20190157 : LETTER

A novel, very low profile, dual band inverted ‘E’ monopole antenna for wireless applications in the laptop computer

Jayshri S. Kulkarni, Raju Seenivasan

Integrated circuits

20190170 : LETTER

A 0.4-V 0.2 pJ/step 90-dB SNDR 20-kHz CT delta-sigma modulator using class-AB amplifier with a novel local common-mode feedback

Yan Chen, Xu Wang, Yang Zhang, Kong-Pang Pun

Integrated circuits

20190176 : LETTER

A 24-bit sigma-delta ADC with configurable chopping scheme

Li Li, Xu Cheng, Zhang Zhang, Jianmin Zeng, Xiaoyang Zeng

Integrated circuits

20190179 : LETTER

An architecture design for anti-jamming circuit with low power and low area cost in high-precision GNSS receiver chip

Yuheng Yang, Xueyong Liu, Jie Chen

Integrated circuits

20190196 : LETTER

Design and verification of universal evaluation system for single event effect sensitivity measurement in very-large-scale integrated circuits

Liewei Xu, Chang Cai, Tianqi Liu, Lingyun Ke, Jun Yu, Chang Wu

Electromagnetic theory

20190204 : LETTER

Indoor exclusion zone analysis in a nuclear power plant with wirelessHART application

Jong-Eon Park, Sangwoon Youn, Jaeyul Choo, Hosung Choo

Microwave and millimeter-wave devices, circuits, and modules

20190233 : LETTER

A 6–18 GHz 6-bit active phase shifter in 0.13-µm SiGe BiCMOS

Lei Luo, Zhiqun Li, Yan Yao, Guoxiao Cheng

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IEICE Electronics Express

ELEX Best Paper Award in the year 2023

20220558 : LETTER

A 41-GHz 19.4-dBm P_sat CMOS Doherty power amplifier for 5G NR applications

20230395 : LETTER

Low-noise balanced mixer for 300-GHz band based on Fermi-level managed barrier diode on SiC platform

Archives

Vol. 16 No. 10

20190080 : LETTER

Low-latency semi-systolic architecture for multiplication over finite fields

20190098 : LETTER

A high-pass filter based on through-silicon via (TSV)

20190116 : LETTER

A 1.05-V 62-MHz with 0.12-nW standby power SOTB-65 nm chip of 32-point DCT based on adaptive CORDIC

20190154 : LETTER

Analytic analysis for effects of input initial phase on input-output dynamics of memristor

20190157 : LETTER

A novel, very low profile, dual band inverted ‘E’ monopole antenna for wireless applications in the laptop computer

20190170 : LETTER

A 0.4-V 0.2 pJ/step 90-dB SNDR 20-kHz CT delta-sigma modulator using class-AB amplifier with a novel local common-mode feedback

20190176 : LETTER

A 24-bit sigma-delta ADC with configurable chopping scheme

20190179 : LETTER

An architecture design for anti-jamming circuit with low power and low area cost in high-precision GNSS receiver chip

20190196 : LETTER

Design and verification of universal evaluation system for single event effect sensitivity measurement in very-large-scale integrated circuits

20190204 : LETTER

Indoor exclusion zone analysis in a nuclear power plant with wirelessHART application

20190233 : LETTER

A 6–18 GHz 6-bit active phase shifter in 0.13-µm SiGe BiCMOS