| 大会名称 |
| 2017年 総合大会 |
| 大会コ－ド |
| 2017G |
| 開催年 |
|
2017
|
| 発行日 |
|
|
| セッション番号 |
|
CI-3
|
| セッション名 |
|
5Gにおける無線用途デバイスの現状と展望
|
| 講演日 |
|
2017/3/22
|
| 講演場所(会議室等) |
|
共通講義棟北 N405
|
| 講演番号 |
|
CI-3-5
|
| タイトル |
|
Recent Topics of GaN Epitaxial Growth by MOCVD for Electric Devices
|
| 著者名 |
|
Yohei Otoki,
|
| キーワード |
|
GaN, electronic devices, Epitaxial growth, MOCVD, Substrate
|
| 抄録 |
|
Recent technology of GaN epitaxial growth for electrical devices by MOCVD will be presented together with future ideas for higher device performanc. The growth window of GaN epitaxial layers needs precise control of growth parameters and generation of points defects and optimized buffer design. New technology using GaN substrates and diamond heat sink are expected to realize dramatical improvement of the performance in the future.
|
| 本文pdf |
|
PDF download
|
