IEICE Technical Committee

Electronics-Silicon Devices and Materials(Date:2006/06/26)

Presentation

Control of defect and impurity states at AlGaN surfaces for sensor application(Session 5 Compound Semiconductor Devices II,AWAD2006)

T. Hashizume, M. Kaneko, J. Kotani, T. Kokawa, T. Kimura, T. Sato,

[Date]2006/6/26
[Paper #]ED2006-75,SDM2006-83

Low Distortion GaN Power Amplifier Technology for L/S band Applications(Session 5 Compound Semiconductor Devices II,AWAD2006)

Kohji MATSUNAGA, Hironobu MIYAMOTO, Hidenori SHIMAWAKI,

[Date]2006/6/26
[Paper #]ED2006-76,SDM2006-84

Dual-gate E/E and E/D-mode AlGaAs/InGaAs pHEMT for microwave power applications(Session 5 Compound Semiconductor Devices II,AWAD2006)

D. M. Lin, C. K. Lin, J. S. Wu, W. K. Wang, F. S Huang, Y. J. Chan, Y. C. Wang,

[Date]2006/6/26
[Paper #]ED2006-77,SDM2006-85

HBT Power Amplifiers for Handset Applications(Session 5 Compound Semiconductor Devices II,AWAD2006)

Kazuya YAMAMOTO, Satoshi SUZUKI, Shinichi MIYAKUNI, Toshiaki KITANO, Kosei MAEMURA, Teruyuki SHIMURA, Kazuo HAYASHI,

[Date]2006/6/26
[Paper #]ED2006-78,SDM2006-86

Large Grain Growth of Silicon Thin Films by using CW Green Laser(Session 6A Silicon Devices III,AWAD2006)

Shin-Ichiro Kuroki, Shuntaro Fujii, Koji Kotani, Takashi Ito,

[Date]2006/6/26
[Paper #]ED2006-79,SDM2006-87

Application of ELA in Si Transistors(Session 6A Silicon Devices III,AWAD2006)

Takashi NOGUCHI,

[Date]2006/6/26
[Paper #]ED2006-80,SDM2006-88

Observation of gate-bias dependent interface coupling in thin SOI MOSFETs(Session 6A Silicon Devices III,AWAD2006)

Y. C. Jung, K. H. Cho, S. W. Hwang, D. Ahn,

[Date]2006/6/26
[Paper #]ED2006-81,SDM2006-89

SOI-Based Nanoscale CMOS Device Technology(Session 6A Silicon Devices III,AWAD2006)

Chang-Geun Ahn, Kiju Im, Jong-Heon Yang, In-Bok Baek, Won-Ju Cho, Seong-jae Lee,

[Date]2006/6/26
[Paper #]ED2006-82,SDM2006-90

Phosphorus Doping to Si Quantum Dots and Its Floating Gate Application(Session 6A Silicon Devices III,AWAD2006)

Katsunori MAKIHARA, Yoshihiro KAWAGUCHI, Mitsuhisa IKEDA, Hideki MURAKAMI, Seiichiro HIGASHI, Seiichi MIYAZAKI,

[Date]2006/6/26
[Paper #]ED2006-83,SDM2006-91

Fast recovery SiGe/Si/Si pin diodes with a selective lifetime control technique(Session 6B Power Devices,AWAD2006)

Fumihiko HIROSE, Shinichi NAGASE, Yusuke IDA,

[Date]2006/6/26
[Paper #]ED2006-84,SDM2006-92

A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Session 6B Power Devices,AWAD2006)

Feng-Tso Chien, Chien-Nan Liao, Yei-Long Tsai, Ching-Ling Cheng,

[Date]2006/6/26
[Paper #]ED2006-85,SDM2006-93

The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006)

Feng-Tsun Chien, Chien-Nan Liao, Chi-Ling Wang, Feng-Tso Chien,

[Date]2006/6/26
[Paper #]ED2006-86,SDM2006-94

A Large-Signal Model of RF LDMOS with Skin Effects of Power Combining Structures(Session 6B Power Devices,AWAD2006)

Jeonghu HAN, Changkun PARK, Songcheol HONG,

[Date]2006/6/26
[Paper #]ED2006-87,SDM2006-95

The Dependence of Remaining Carbon in the Electrical Property of the Gate Insulator Film on SiC at Low Temperature Insulator Formation(Session 6B Power Devices,AWAD2006)

Koutarou Tanaka, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi,

[Date]2006/6/26
[Paper #]ED2006-88,SDM2006-96

SiGe Source and Drain for Performance Boosting of Peripheral PMOS Transistor in High Density 4 Gb DRAM Technologies(Session 7A Silicon Devices IV,AWAD2006)

InSoo Jung, Byeong-Chan Lee, Deok-Hyung Lee, Sun-Ghil Lee, Jong-Wook Lee, Siyoung Choi, U-In Chung, Joo Tae Moon,

[Date]2006/6/26
[Paper #]ED2006-89,SDM2006-97

Accurate Extraction of the Trap Depth From RTS Noise Data By including Poly Depletion Effect and Surface Potential Variation in MOSFETs(Session 7A Silicon Devices IV,AWAD2006)

Hochul Lee, Youngchang Yoon, Hyungcheol Shin,

[Date]2006/6/26
[Paper #]ED2006-90,SDM2006-98

Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles(Session 7A Silicon Devices IV,AWAD2006)

Seongjae Cho, Jang-Gn Yun, Il Han Park, Jung Hoon Lee, Jong Pil Kim, Sangwoo Kang, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park,

[Date]2006/6/26
[Paper #]ED2006-91,SDM2006-99

Design and Simulation of Asymmetric MOSFETs(Session 7A Silicon Devices IV,AWAD2006)

Jong Pil Kim, Woo Young Choi, Jae Young Song, Seongjae Cho, Sangwoo Kang, Sang Wan Kim, Jong Duk Lee, Byung-Gook Park,

[Date]2006/6/26
[Paper #]ED2006-92,SDM2006-100

Investigation of Gate Misalignment Effects in FinFETs(Session 7A Silicon Devices IV,AWAD2006)

Kuk-Hwan Kim, Jin-Woo Han, Yang-Kyu Choi,

[Date]2006/6/26
[Paper #]ED2006-93,SDM2006-101

GaN-based Vertical Field Effect Transistors with High Current Density Fabricated Using Self-Aligned Process(Session 7B Compound Semiconductor Devices III)

Tatsuo MORITA, Satoshi NAKAZAWA, Tetsuzo UEDA, Tsuyoshi TANAKA,

[Date]2006/6/26
[Paper #]ED2006-94,SDM2006-102