Presentation	2006/6/26 Dual-gate E/E and E/D-mode AlGaAs/InGaAs pHEMT for microwave power applications(Session 5 Compound Semiconductor Devices II,AWAD2006) D. M. Lin, C. K. Lin, J. S. Wu, W. K. Wang, F. S Huang, Y. J. Chan, Y. C. Wang,
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Abstract(in English)	In this study, we demonstrated a dual-gate enhancement/enhancement E/E-mode and enhancement/depletion (E/D) mode AlGaAs/InGaAs pHEMTs technology for high voltage and high power amplifier application. The dual-gate devices shows the higher breakdown voltage (V_ ) and maximum oscillator frequency (f_) due to two depletion regions can also share total electrical field in the device so that the higher output resistance (R_) and lower gate-to-drain capacitance (C_) can be obtain. Therefore, the dual-gate device can be operated at higher drain-to-source voltage (V_) to obtain excellent linear gain and output power performance as compared with conventional single-gate E-mode device. The maximum oscillation frequency increases from 78 GHz to 123 GHz under V_=4V biasing for single gate the E-mode and dual-gate E/E-mode device and the rf maximum output power increases from 636mW/mm to 810mW/mm under a 2.4 GHz operation for single gate the E-mode and dual-gate E/D-mode device, respectively. And, we also demonstrated a 2.4 GHz ultra-high gain and high power density two-stage power amplifier using dual gate E/E and E/D-mode transistors, where the E/E-mode pHEMTs for gain-stage, and E/D-mode pHEMTs for power-stage, respectively. The linear gain of 40 dB and maximum output power of 24 dBm were obtained at V_=4V I_=30mA 0.5-um (gate length)×2 (fingers)×75-um (gate width), and V_=9V I_=100mA for 0.5×8×75-um^2 E/D-mode pHEMTs respectively.
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Keyword(in English)	AlGaAs/InGaAs / enhancement / depletion / pHEMTs / power amplifiers
Paper #	ED2006-77,SDM2006-85
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Conference Information
Committee	SDM
Conference Date	2006/6/26(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Dual-gate E/E and E/D-mode AlGaAs/InGaAs pHEMT for microwave power applications(Session 5 Compound Semiconductor Devices II,AWAD2006)
Sub Title (in English)
Keyword(1)	AlGaAs/InGaAs
Keyword(2)	enhancement
Keyword(3)	depletion
Keyword(4)	pHEMTs
Keyword(5)	power amplifiers
1st Author's Name	D. M. Lin
1st Author's Affiliation	Department of Electrical Engineering, National Central University()
2nd Author's Name	C. K. Lin
2nd Author's Affiliation	WIN Semiconductor Corp
3rd Author's Name	J. S. Wu
3rd Author's Affiliation	Department of Electrical Engineering, National Central University
4th Author's Name	W. K. Wang
4th Author's Affiliation	WIN Semiconductor Corp
5th Author's Name	F. S Huang
5th Author's Affiliation	Department of Electrical Engineering, National Central University
6th Author's Name	Y. J. Chan
6th Author's Affiliation	Department of Electrical Engineering, National Central University
7th Author's Name	Y. C. Wang
7th Author's Affiliation	WIN Semiconductor Corp
Date	2006/6/26
Paper #	ED2006-77,SDM2006-85
Volume (vol)	vol.106
Number (no)	138
Page	pp.pp.-
#Pages	6
Date of Issue