| Presentation | 2006/6/26 Control of defect and impurity states at AlGaN surfaces for sensor application(Session 5 Compound Semiconductor Devices II,AWAD2006) T. Hashizume, M. Kaneko, J. Kotani, T. Kokawa, T. Kimura, T. Sato, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We proposed a surface control process for suppressing tunneling leakage currents of Schottky contacts on AlGaN/GaN heterostrcutures. The process consisted of the nitrogen radical treatment, the deposition of an ultrathin Al layer, the UHV annealing and finally the removal of the Al layer. The Ni/Au Schottky gates fabricated on the processed AlGaN surfaces showed pronounced reduction of leakage current and clear temperature dependence of I-V curves. The H_2 gas-sensing characteristics of Pd Schottky diodes formed on AlGaN/GaN heterostructure were investigated. The Pd/AlGaN/GaN diode showed the systematic shift in the C-V curve for different partial pressure of H_2, keeping the shape of the curve approximately the same. The maximum shift in the threshold voltage obtained was about 1200mV which is much larger than 500mV reported for the Pd-based Si MOS sensors. Liquid-phase sensing characteristics of open-gate AlGaN/GaN HEMT structures were investigated in aqueous solutions. We observed a fine parallel shift in the transfer curves according to change in pH value in a solution, indicating the corresponding potential change at the AlGaN surface. The sensitivity for the potential change was 57.5mV/pH. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / Schottky / leakage current / nitrogen vacancy / oxygen / hydrogen sensor / chemical sensor |
| Paper # | ED2006-75,SDM2006-83 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Control of defect and impurity states at AlGaN surfaces for sensor application(Session 5 Compound Semiconductor Devices II,AWAD2006) |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | Schottky |
| Keyword(3) | leakage current |
| Keyword(4) | nitrogen vacancy |
| Keyword(5) | oxygen |
| Keyword(6) | hydrogen sensor |
| Keyword(7) | chemical sensor |
| 1st Author's Name | T. Hashizume |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University() |
| 2nd Author's Name | M. Kaneko |
| 2nd Author's Affiliation | Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University |
| 3rd Author's Name | J. Kotani |
| 3rd Author's Affiliation | Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University |
| 4th Author's Name | T. Kokawa |
| 4th Author's Affiliation | Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University |
| 5th Author's Name | T. Kimura |
| 5th Author's Affiliation | Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University |
| 6th Author's Name | T. Sato |
| 6th Author's Affiliation | Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University |
| Date | 2006/6/26 |
| Paper # | ED2006-75,SDM2006-83 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |