Presentation 2006/6/26
A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Session 6B Power Devices,AWAD2006)
Feng-Tso Chien, Chien-Nan Liao, Yei-Long Tsai, Ching-Ling Cheng,
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Abstract(in English) Vertical Power MOSFETs are widely designed by deep well structures for breakdown requirement. In this study, we proposed, fabricated, and analyzed a "shallow dual well" structure Power MOSFET, which utilize an n-well to cover the conventional p-well. The cell density can be increased 351%. The increased cell density leads to improved gate charge and on resistance performances about 66.5% and 15.8% without sacrificing the device breakdown owing to a shallow junction design. In addition, with the dual well structure design, the breakdown point will occur at the center of the well. Therefore, the capability of avalanche energy can be improved about 1.9 times than the tradition well structure.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Power MOSFET / VDMOSFET / shallow dual well / avalanche breakdown
Paper # ED2006-85,SDM2006-93
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Committee SDM
Conference Date 2006/6/26(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Novel Power MOSFET Structure with Shallow Junction Dual Well Design(Session 6B Power Devices,AWAD2006)
Sub Title (in English)
Keyword(1) Power MOSFET
Keyword(2) VDMOSFET
Keyword(3) shallow dual well
Keyword(4) avalanche breakdown
1st Author's Name Feng-Tso Chien
1st Author's Affiliation Department of Electronic Engineering, Feng Chia University()
2nd Author's Name Chien-Nan Liao
2nd Author's Affiliation Department of Electronic Engineering, Feng Chia University
3rd Author's Name Yei-Long Tsai
3rd Author's Affiliation R&D DEPT, Chino-Excel Technology Corp.
4th Author's Name Ching-Ling Cheng
4th Author's Affiliation R&D DEPT, Chino-Excel Technology Corp.
Date 2006/6/26
Paper # ED2006-85,SDM2006-93
Volume (vol) vol.106
Number (no) 138
Page pp.pp.-
#Pages 4
Date of Issue