| Presentation | 2006/6/26 Accurate Extraction of the Trap Depth From RTS Noise Data By including Poly Depletion Effect and Surface Potential Variation in MOSFETs(Session 7A Silicon Devices IV,AWAD2006) Hochul Lee, Youngchang Yoon, Hyungcheol Shin, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Accurate extraction of the trap position in the oxide in deep-submicron MOSFET by RTN measurement has been investigated both theoretically and experimentally. The conventional equation based on the ratio of emission time and capture time ignores two effects, that is, the poly gate depletion effect and surface potential variation in strong inversion regime. In this paper, by including both of the two effects, we have derived a new equation which gives us more accurate information of the trap depth from the interface and the trap energy. With experimental result, we provide the comparison of the trap depth obtained from the new equation and that of the conventional method. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | trap depth / RTN / time constants / poly gate depletion effect / surface potential variation |
| Paper # | ED2006-90,SDM2006-98 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Accurate Extraction of the Trap Depth From RTS Noise Data By including Poly Depletion Effect and Surface Potential Variation in MOSFETs(Session 7A Silicon Devices IV,AWAD2006) |
| Sub Title (in English) | |
| Keyword(1) | trap depth |
| Keyword(2) | RTN |
| Keyword(3) | time constants |
| Keyword(4) | poly gate depletion effect |
| Keyword(5) | surface potential variation |
| 1st Author's Name | Hochul Lee |
| 1st Author's Affiliation | Seoul National Univ. Dept. of EE() |
| 2nd Author's Name | Youngchang Yoon |
| 2nd Author's Affiliation | Seoul National Univ. Dept. of EE |
| 3rd Author's Name | Hyungcheol Shin |
| 3rd Author's Affiliation | Seoul National Univ. Dept. of EE |
| Date | 2006/6/26 |
| Paper # | ED2006-90,SDM2006-98 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |