| Presentation | 2006/6/26 A Large-Signal Model of RF LDMOS with Skin Effects of Power Combining Structures(Session 6B Power Devices,AWAD2006) Jeonghu HAN, Changkun PARK, Songcheol HONG, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | An empirical large signal model for RF LDMOS transistors is presented to have good accuracy for all device operating regions up to 20GHz. Skin effects of combining metal structures, non-reciprocal capacitance, and non-quasi-static effect are considered in this model. A power transistor of 1.92mm gate width is fabricated in an LDMOS technology which is compatible with a 0.3-μm CMOS process. The LDMOS transistor is modeled and compared with measured data. A load-pull measurement results are exactly predicted by the proposed model, which show a PldB of 20dBm, a gain of 19dB, and PAE (power-added-efficiency) of 62% at the PldB. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Empirical model / large signal model / power MOSFET / RF LDMOS |
| Paper # | ED2006-87,SDM2006-95 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Large-Signal Model of RF LDMOS with Skin Effects of Power Combining Structures(Session 6B Power Devices,AWAD2006) |
| Sub Title (in English) | |
| Keyword(1) | Empirical model |
| Keyword(2) | large signal model |
| Keyword(3) | power MOSFET |
| Keyword(4) | RF LDMOS |
| 1st Author's Name | Jeonghu HAN |
| 1st Author's Affiliation | Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST)() |
| 2nd Author's Name | Changkun PARK |
| 2nd Author's Affiliation | Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST) |
| 3rd Author's Name | Songcheol HONG |
| 3rd Author's Affiliation | Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology (KAIST) |
| Date | 2006/6/26 |
| Paper # | ED2006-87,SDM2006-95 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |