| Presentation | 2006/6/26 Investigation of Gate Misalignment Effects in FinFETs(Session 7A Silicon Devices IV,AWAD2006) Kuk-Hwan Kim, Jin-Woo Han, Yang-Kyu Choi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Gate misalignment effects on electrical properties of FinFETs have been investigated with three-dimensional (3-D) mixed-mode simulator. A major trade-off between S/D series resistances and diffusion capacitances was induced by the gate misalignment. The influences of series resistances on short channel effects of few tens nanometer device are discussed in detail. A SOI FinFET and a body-tied FinFET were compared in terms of FO4 inverter delay to assess the gate misalignment effects on circuit performance as a whole. In the SOI FinFET, source series resistance is dominant factor in determining RC delay, while drain diffusion capacitance is more significant in the body-tied FinFET. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gate misalignment / FinFETs / Simulation / Mixed-Mode / Series resistence / Diffusion capacitance / FO4 delay |
| Paper # | ED2006-93,SDM2006-101 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Investigation of Gate Misalignment Effects in FinFETs(Session 7A Silicon Devices IV,AWAD2006) |
| Sub Title (in English) | |
| Keyword(1) | Gate misalignment |
| Keyword(2) | FinFETs |
| Keyword(3) | Simulation |
| Keyword(4) | Mixed-Mode |
| Keyword(5) | Series resistence |
| Keyword(6) | Diffusion capacitance |
| Keyword(7) | FO4 delay |
| 1st Author's Name | Kuk-Hwan Kim |
| 1st Author's Affiliation | Dept. of EECS, Korea Advanced Institute of Science and Technology() |
| 2nd Author's Name | Jin-Woo Han |
| 2nd Author's Affiliation | Dept. of EECS, Korea Advanced Institute of Science and Technology |
| 3rd Author's Name | Yang-Kyu Choi |
| 3rd Author's Affiliation | Dept. of EECS, Korea Advanced Institute of Science and Technology |
| Date | 2006/6/26 |
| Paper # | ED2006-93,SDM2006-101 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |