Presentation 2006/6/26
HBT Power Amplifiers for Handset Applications(Session 5 Compound Semiconductor Devices II,AWAD2006)
Kazuya YAMAMOTO, Satoshi SUZUKI, Shinichi MIYAKUNI, Toshiaki KITANO, Kosei MAEMURA, Teruyuki SHIMURA, Kazuo HAYASHI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) This paper overviews the device and circuit design techniques employed in HBT power amplifiers for handset applications including GSM and CDMA while focusing on ballast design and VSWR ruggedness for HBTs. At first the paper presents a calculation method useful for ballasting resistor design, and then shows that AlGaAs-HBT and InGaP-HBT are quite different in the effectiveness of ballasting resistors by calculation and experimental results. As an example of the additional circuit implementation for VSWR ruggedness improvement, this paper also gives a detailed introduction of an active feedback circuit design technique used for GSM handset amplifiers, and subsequently describes device and circuit design considerations for CDMA handset amplifiers.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) AlGaAs / InGaP / HBT / power amplifier / GSM / CDMA
Paper # ED2006-78,SDM2006-86
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Conference Information
Committee SDM
Conference Date 2006/6/26(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) HBT Power Amplifiers for Handset Applications(Session 5 Compound Semiconductor Devices II,AWAD2006)
Sub Title (in English)
Keyword(1) AlGaAs
Keyword(2) InGaP
Keyword(3) HBT
Keyword(4) power amplifier
Keyword(5) GSM
Keyword(6) CDMA
1st Author's Name Kazuya YAMAMOTO
1st Author's Affiliation High-Frequency & Optical Device Works, Mitsubishi Electric Corporation()
2nd Author's Name Satoshi SUZUKI
2nd Author's Affiliation High-Frequency & Optical Device Works, Mitsubishi Electric Corporation
3rd Author's Name Shinichi MIYAKUNI
3rd Author's Affiliation High-Frequency & Optical Device Works, Mitsubishi Electric Corporation
4th Author's Name Toshiaki KITANO
4th Author's Affiliation High-Frequency & Optical Device Works, Mitsubishi Electric Corporation
5th Author's Name Kosei MAEMURA
5th Author's Affiliation High-Frequency & Optical Device Works, Mitsubishi Electric Corporation
6th Author's Name Teruyuki SHIMURA
6th Author's Affiliation High-Frequency & Optical Device Works, Mitsubishi Electric Corporation
7th Author's Name Kazuo HAYASHI
7th Author's Affiliation High-Frequency & Optical Device Works, Mitsubishi Electric Corporation
Date 2006/6/26
Paper # ED2006-78,SDM2006-86
Volume (vol) vol.106
Number (no) 138
Page pp.pp.-
#Pages 6
Date of Issue