Presentation | 2006/6/26 HBT Power Amplifiers for Handset Applications(Session 5 Compound Semiconductor Devices II,AWAD2006) Kazuya YAMAMOTO, Satoshi SUZUKI, Shinichi MIYAKUNI, Toshiaki KITANO, Kosei MAEMURA, Teruyuki SHIMURA, Kazuo HAYASHI, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | This paper overviews the device and circuit design techniques employed in HBT power amplifiers for handset applications including GSM and CDMA while focusing on ballast design and VSWR ruggedness for HBTs. At first the paper presents a calculation method useful for ballasting resistor design, and then shows that AlGaAs-HBT and InGaP-HBT are quite different in the effectiveness of ballasting resistors by calculation and experimental results. As an example of the additional circuit implementation for VSWR ruggedness improvement, this paper also gives a detailed introduction of an active feedback circuit design technique used for GSM handset amplifiers, and subsequently describes device and circuit design considerations for CDMA handset amplifiers. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | AlGaAs / InGaP / HBT / power amplifier / GSM / CDMA |
Paper # | ED2006-78,SDM2006-86 |
Date of Issue |
Conference Information | |
Committee | SDM |
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Conference Date | 2006/6/26(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | HBT Power Amplifiers for Handset Applications(Session 5 Compound Semiconductor Devices II,AWAD2006) |
Sub Title (in English) | |
Keyword(1) | AlGaAs |
Keyword(2) | InGaP |
Keyword(3) | HBT |
Keyword(4) | power amplifier |
Keyword(5) | GSM |
Keyword(6) | CDMA |
1st Author's Name | Kazuya YAMAMOTO |
1st Author's Affiliation | High-Frequency & Optical Device Works, Mitsubishi Electric Corporation() |
2nd Author's Name | Satoshi SUZUKI |
2nd Author's Affiliation | High-Frequency & Optical Device Works, Mitsubishi Electric Corporation |
3rd Author's Name | Shinichi MIYAKUNI |
3rd Author's Affiliation | High-Frequency & Optical Device Works, Mitsubishi Electric Corporation |
4th Author's Name | Toshiaki KITANO |
4th Author's Affiliation | High-Frequency & Optical Device Works, Mitsubishi Electric Corporation |
5th Author's Name | Kosei MAEMURA |
5th Author's Affiliation | High-Frequency & Optical Device Works, Mitsubishi Electric Corporation |
6th Author's Name | Teruyuki SHIMURA |
6th Author's Affiliation | High-Frequency & Optical Device Works, Mitsubishi Electric Corporation |
7th Author's Name | Kazuo HAYASHI |
7th Author's Affiliation | High-Frequency & Optical Device Works, Mitsubishi Electric Corporation |
Date | 2006/6/26 |
Paper # | ED2006-78,SDM2006-86 |
Volume (vol) | vol.106 |
Number (no) | 138 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |