Presentation 2006/6/26
Design and Simulation of Asymmetric MOSFETs(Session 7A Silicon Devices IV,AWAD2006)
Jong Pil Kim, Woo Young Choi, Jae Young Song, Seongjae Cho, Sangwoo Kang, Sang Wan Kim, Jong Duk Lee, Byung-Gook Park,
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Abstract(in English) An asymmetric MOSFET (with no LDD on the source side) is simulated on bulk-Si using a device simulator (SILVACO). We have introduced not only a mesa structure to reduce the drain influence on the source but also an asymmetric LDD structure which does not have LDD at the source region to increase drive current (I_). First of all, we have simulated to compare the characteristics between asymmetric and symmetric MOSFETs. Basically, both asymmetric and symmetric MOSFETs have an n-type channel (25nm) and the same physical parameters. According to the simulation results, the 25nm asymmetric MOSFET has the drive current (I_) of 668 μA/μm at V_G-V_=0.8V and V_=1V. It has off current (I_) of 0.475 μA/μm at V_G-V_=-0.2V and V_=1V. The threshold voltage is 0.1V at V_=0.05V and sub-threshold swing [SS] is 100 mV/dec and DIBL is 120 mV/V. When we compare this with the 25nm symmetric MOSFET, the asymmetric MOSFET shows better device performances.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) asymmetric MOSFET / LDD / mesa structure
Paper # ED2006-92,SDM2006-100
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Conference Information
Committee SDM
Conference Date 2006/6/26(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Design and Simulation of Asymmetric MOSFETs(Session 7A Silicon Devices IV,AWAD2006)
Sub Title (in English)
Keyword(1) asymmetric MOSFET
Keyword(2) LDD
Keyword(3) mesa structure
1st Author's Name Jong Pil Kim
1st Author's Affiliation Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University()
2nd Author's Name Woo Young Choi
2nd Author's Affiliation Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
3rd Author's Name Jae Young Song
3rd Author's Affiliation Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
4th Author's Name Seongjae Cho
4th Author's Affiliation Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
5th Author's Name Sangwoo Kang
5th Author's Affiliation Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
6th Author's Name Sang Wan Kim
6th Author's Affiliation Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
7th Author's Name Jong Duk Lee
7th Author's Affiliation Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
8th Author's Name Byung-Gook Park
8th Author's Affiliation Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
Date 2006/6/26
Paper # ED2006-92,SDM2006-100
Volume (vol) vol.106
Number (no) 138
Page pp.pp.-
#Pages 4
Date of Issue