| Presentation | 2006/6/26 Phosphorus Doping to Si Quantum Dots and Its Floating Gate Application(Session 6A Silicon Devices III,AWAD2006) Katsunori MAKIHARA, Yoshihiro KAWAGUCHI, Mitsuhisa IKEDA, Hideki MURAKAMI, Seiichiro HIGASHI, Seiichi MIYAZAKI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The charge injection and extraction characteristics of phosphorus doped Si quantum dots as a floating gate in MOS capacitors have been studied at room temperature. Delta doping of phosphorus atoms in Si-QDs was carried out by a pulse injection of 1% PH_3 diluted with He during the Si dot formation. C-V hysteresis attributed to charging and discharging to Si-QDs, being independent on the frequency in the range from 10kHz to 1MHz, is clearly observed regardless of P-doping to Si-QDs. Notice that P-doping to Si-QDs causes negative flat-band voltage shift. Considering the fact that MOS capacitors fabricated without Si-QDs formation show no hysteresis and no flat-band voltage shift in C-V characteristics, it is likely that, for P-doped Si-QDs, the electron emission occurs from the conduction band and results in a positively-charged state originating from ionized P donor. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si quantum dots / Phosphorous doping / Floating gate / MOS |
| Paper # | ED2006-83,SDM2006-91 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Phosphorus Doping to Si Quantum Dots and Its Floating Gate Application(Session 6A Silicon Devices III,AWAD2006) |
| Sub Title (in English) | |
| Keyword(1) | Si quantum dots |
| Keyword(2) | Phosphorous doping |
| Keyword(3) | Floating gate |
| Keyword(4) | MOS |
| 1st Author's Name | Katsunori MAKIHARA |
| 1st Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University() |
| 2nd Author's Name | Yoshihiro KAWAGUCHI |
| 2nd Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University |
| 3rd Author's Name | Mitsuhisa IKEDA |
| 3rd Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University |
| 4th Author's Name | Hideki MURAKAMI |
| 4th Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University |
| 5th Author's Name | Seiichiro HIGASHI |
| 5th Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University |
| 6th Author's Name | Seiichi MIYAZAKI |
| 6th Author's Affiliation | Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University |
| Date | 2006/6/26 |
| Paper # | ED2006-83,SDM2006-91 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |