| Presentation | 2006/6/26 Observation of gate-bias dependent interface coupling in thin SOI MOSFETs(Session 6A Silicon Devices III,AWAD2006) Y. C. Jung, K. H. Cho, S. W. Hwang, D. Ahn, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated and characterized a silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect-transistor (MOSFET) with the SOI film thickness of 26nm. The measured data show that the transconductance (g_m) peak in the front gate bias shifts and then splits into two peaks as the back gate voltage decreases. This observation is interpreted as due to a transition between the volume inversion state and the interface state. The ratio of the g_m peak splitting to the change of back gate bias is approximately the same as the capacitive coupling factor between the front and the back interfaces. Our observation is consistent with double layer conduction observed in an earlier SOI quantum dot transistor [1]. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | thin SOI MOSFET / transconductance peak splitting / volume inversion |
| Paper # | ED2006-81,SDM2006-89 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Observation of gate-bias dependent interface coupling in thin SOI MOSFETs(Session 6A Silicon Devices III,AWAD2006) |
| Sub Title (in English) | |
| Keyword(1) | thin SOI MOSFET |
| Keyword(2) | transconductance peak splitting |
| Keyword(3) | volume inversion |
| 1st Author's Name | Y. C. Jung |
| 1st Author's Affiliation | Electronics and Computer Engineering, Korea University() |
| 2nd Author's Name | K. H. Cho |
| 2nd Author's Affiliation | Electronics and Computer Engineering, Korea University |
| 3rd Author's Name | S. W. Hwang |
| 3rd Author's Affiliation | Electronics and Computer Engineering, Korea University:Institute of Quantum Information Processing and Systems, University of Seoul |
| 4th Author's Name | D. Ahn |
| 4th Author's Affiliation | Institute of Quantum Information Processing and Systems, University of Seoul |
| Date | 2006/6/26 |
| Paper # | ED2006-81,SDM2006-89 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |