Presentation 2006/6/26
Fast recovery SiGe/Si/Si pin diodes with a selective lifetime control technique(Session 6B Power Devices,AWAD2006)
Fumihiko HIROSE, Shinichi NAGASE, Yusuke IDA,
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Abstract(in English) In power switching circuits, fast-recovery diodes with a low on-state voltage drop (V_f) are necessary for lower switching noise, faster operation or lower power dissipation. We have found that pin diodes with SiGe anode layers exhibit very short reverse recovery without deteriorating the on-state voltage drop. In our test fabrication, we have successfully proved a recovery of 160ns and a forward voltage drop of 0.86V at a forward current density (I_f) of 100A/cm^2. A simulation work indicates a possibility of 20ns -0.8V at I_f of 100A A/cm^2 in the present diode by adjusting lifetimes in the anode and i layers independently. We discuss mechanism of the fast recovery and low on-state resistance.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Pin diode / recovery / forward voltage drop / switching
Paper # ED2006-84,SDM2006-92
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Committee SDM
Conference Date 2006/6/26(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fast recovery SiGe/Si/Si pin diodes with a selective lifetime control technique(Session 6B Power Devices,AWAD2006)
Sub Title (in English)
Keyword(1) Pin diode
Keyword(2) recovery
Keyword(3) forward voltage drop
Keyword(4) switching
1st Author's Name Fumihiko HIROSE
1st Author's Affiliation Faculty of Engineering, Yamagata University()
2nd Author's Name Shinichi NAGASE
2nd Author's Affiliation Faculty of Engineering, Yamagata University
3rd Author's Name Yusuke IDA
3rd Author's Affiliation Faculty of Engineering, Yamagata University
Date 2006/6/26
Paper # ED2006-84,SDM2006-92
Volume (vol) vol.106
Number (no) 138
Page pp.pp.-
#Pages 4
Date of Issue