| Presentation | 2006/6/26 The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006) Feng-Tsun Chien, Chien-Nan Liao, Chi-Ling Wang, Feng-Tso Chien, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Low voltage vertical Power MOSFETs employ the substrates doped by Arsenic (As) for low on-resistance issue. However, those substrates lead to un-uniformity breakdown problem for high voltage (HV) epitaxy (low concentration) caused by the out-doping phenomenon under processing. In this study, we use the antimony-doped (Sb) substrate to avoid this drawback for HV devices. However, devices fabricated with Sb-doped substrate show a higher source-drain turn on voltage (V_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Power MOSFET / source-drain voltage / antimony substrate / out doping |
| Paper # | ED2006-86,SDM2006-94 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The Study of Drain Alloy Time and Temperature for Antimony Substrate Vertical High Voltage Power MOSFETs(Session 6B Power Devices,AWAD2006) |
| Sub Title (in English) | |
| Keyword(1) | Power MOSFET |
| Keyword(2) | source-drain voltage |
| Keyword(3) | antimony substrate |
| Keyword(4) | out doping |
| 1st Author's Name | Feng-Tsun Chien |
| 1st Author's Affiliation | Dept. of Electronics Engineering, National Chiao Tung University() |
| 2nd Author's Name | Chien-Nan Liao |
| 2nd Author's Affiliation | Dept. of Electronic Engineering, Feng Chia University |
| 3rd Author's Name | Chi-Ling Wang |
| 3rd Author's Affiliation | Dept. of Electronic Engineering, Feng Chia University |
| 4th Author's Name | Feng-Tso Chien |
| 4th Author's Affiliation | Dept. of Electronic Engineering, Feng Chia University |
| Date | 2006/6/26 |
| Paper # | ED2006-86,SDM2006-94 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |