Presentation 2006/6/26
Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles(Session 7A Silicon Devices IV,AWAD2006)
Seongjae Cho, Jang-Gn Yun, Il Han Park, Jung Hoon Lee, Jong Pil Kim, Sangwoo Kang, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park,
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Abstract(in English) Recently, demands on high density memory arrays are increasing. One of 3-D devices to this end was adopted in this study, where source and drain junctions are formed along a silicon fin. The screening by adjacent high fins for large sensing margin makes it hard to ion-implant with high angle so that vertical ion implantation is inevitable. In this study, the dependency of current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak and the doping gradient are varied to look into the effects on driving currents. Through these analyses, the optimum condition of ion implantation for 3-D devices is estimated.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) 3-D devices / vertical ion implantation / doping profile / peak concentration position (PCP) / doping gradient
Paper # ED2006-91,SDM2006-99
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Committee SDM
Conference Date 2006/6/26(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles(Session 7A Silicon Devices IV,AWAD2006)
Sub Title (in English)
Keyword(1) 3-D devices
Keyword(2) vertical ion implantation
Keyword(3) doping profile
Keyword(4) peak concentration position (PCP)
Keyword(5) doping gradient
1st Author's Name Seongjae Cho
1st Author's Affiliation Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University()
2nd Author's Name Jang-Gn Yun
2nd Author's Affiliation Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
3rd Author's Name Il Han Park
3rd Author's Affiliation Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
4th Author's Name Jung Hoon Lee
4th Author's Affiliation Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
5th Author's Name Jong Pil Kim
5th Author's Affiliation Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
6th Author's Name Sangwoo Kang
6th Author's Affiliation Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
7th Author's Name Jong Duk Lee
7th Author's Affiliation Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
8th Author's Name Hyungcheol Shin
8th Author's Affiliation Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
9th Author's Name Byung-Gook Park
9th Author's Affiliation Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
Date 2006/6/26
Paper # ED2006-91,SDM2006-99
Volume (vol) vol.106
Number (no) 138
Page pp.pp.-
#Pages 4
Date of Issue