Presentation | 2006/6/26 Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles(Session 7A Silicon Devices IV,AWAD2006) Seongjae Cho, Jang-Gn Yun, Il Han Park, Jung Hoon Lee, Jong Pil Kim, Sangwoo Kang, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Recently, demands on high density memory arrays are increasing. One of 3-D devices to this end was adopted in this study, where source and drain junctions are formed along a silicon fin. The screening by adjacent high fins for large sensing margin makes it hard to ion-implant with high angle so that vertical ion implantation is inevitable. In this study, the dependency of current characteristics on doping profiles is investigated by 3-D numerical analysis. The position of concentration peak and the doping gradient are varied to look into the effects on driving currents. Through these analyses, the optimum condition of ion implantation for 3-D devices is estimated. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | 3-D devices / vertical ion implantation / doping profile / peak concentration position (PCP) / doping gradient |
Paper # | ED2006-91,SDM2006-99 |
Date of Issue |
Conference Information | |
Committee | SDM |
---|---|
Conference Date | 2006/6/26(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
---|---|
Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Analyses on Current Characteristics of 3-D MOSFET Nonvolatile Memory Devices Determined by Junction Doping Profiles(Session 7A Silicon Devices IV,AWAD2006) |
Sub Title (in English) | |
Keyword(1) | 3-D devices |
Keyword(2) | vertical ion implantation |
Keyword(3) | doping profile |
Keyword(4) | peak concentration position (PCP) |
Keyword(5) | doping gradient |
1st Author's Name | Seongjae Cho |
1st Author's Affiliation | Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University() |
2nd Author's Name | Jang-Gn Yun |
2nd Author's Affiliation | Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University |
3rd Author's Name | Il Han Park |
3rd Author's Affiliation | Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University |
4th Author's Name | Jung Hoon Lee |
4th Author's Affiliation | Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University |
5th Author's Name | Jong Pil Kim |
5th Author's Affiliation | Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University |
6th Author's Name | Sangwoo Kang |
6th Author's Affiliation | Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University |
7th Author's Name | Jong Duk Lee |
7th Author's Affiliation | Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University |
8th Author's Name | Hyungcheol Shin |
8th Author's Affiliation | Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University |
9th Author's Name | Byung-Gook Park |
9th Author's Affiliation | Inter-university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University |
Date | 2006/6/26 |
Paper # | ED2006-91,SDM2006-99 |
Volume (vol) | vol.106 |
Number (no) | 138 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |