Presentation 2006/6/26
Large Grain Growth of Silicon Thin Films by using CW Green Laser(Session 6A Silicon Devices III,AWAD2006)
Shin-Ichiro Kuroki, Shuntaro Fujii, Koji Kotani, Takashi Ito,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Low temperature crystallization of amorphous silicon (a-Si) thin films using a diode-pumped solid state (DPSS) continuous wave (CW) laser was investigated. A laser beam spot was designed for a gradual slope of temperature in a laser irradiated region, and was elongated to a scanning direction. The elongated laser spot with a gradual slope of temperature make a crystallization time longer. Consequently, a two dimensional lateral crystallization of (100) well-oriented Si thin films was achieved.
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Keyword(in English) polycrystalline silicon thin films / thin film transistor / Laser recrystallization
Paper # ED2006-79,SDM2006-87
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Committee SDM
Conference Date 2006/6/26(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Large Grain Growth of Silicon Thin Films by using CW Green Laser(Session 6A Silicon Devices III,AWAD2006)
Sub Title (in English)
Keyword(1) polycrystalline silicon thin films
Keyword(2) thin film transistor
Keyword(3) Laser recrystallization
1st Author's Name Shin-Ichiro Kuroki
1st Author's Affiliation Graduate School of Engineering, Tohoku University()
2nd Author's Name Shuntaro Fujii
2nd Author's Affiliation Graduate School of Engineering, Tohoku University
3rd Author's Name Koji Kotani
3rd Author's Affiliation Graduate School of Engineering, Tohoku University
4th Author's Name Takashi Ito
4th Author's Affiliation Graduate School of Engineering, Tohoku University
Date 2006/6/26
Paper # ED2006-79,SDM2006-87
Volume (vol) vol.106
Number (no) 138
Page pp.pp.-
#Pages 4
Date of Issue