| Presentation | 2006/6/26 Low Distortion GaN Power Amplifier Technology for L/S band Applications(Session 5 Compound Semiconductor Devices II,AWAD2006) Kohji MATSUNAGA, Hironobu MIYAMOTO, Hidenori SHIMAWAKI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper describes design and performance of GaN power amplifier for L/S-band applications. Moreover, theoretical approach of low distortion methods and eliminating memory effects at high voltage operation are described. The developed GaN amplifier demonstrated 370W peak power at 2.14GHz WCDMA signal. The Power amplifier also delivered low intermodulation of -50dBc with low asymmetry ratio after DPD linearization. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Amplifier / Low distortion / Memory effect / Digital pre-distortion |
| Paper # | ED2006-76,SDM2006-84 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low Distortion GaN Power Amplifier Technology for L/S band Applications(Session 5 Compound Semiconductor Devices II,AWAD2006) |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Amplifier |
| Keyword(3) | Low distortion |
| Keyword(4) | Memory effect |
| Keyword(5) | Digital pre-distortion |
| 1st Author's Name | Kohji MATSUNAGA |
| 1st Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices:System Devices Research Laboratories, NEC Corporation() |
| 2nd Author's Name | Hironobu MIYAMOTO |
| 2nd Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices |
| 3rd Author's Name | Hidenori SHIMAWAKI |
| 3rd Author's Affiliation | Advanced HF Device R&D Center, R&D Association for Future Electron Devices:System Devices Research Laboratories, NEC Corporation |
| Date | 2006/6/26 |
| Paper # | ED2006-76,SDM2006-84 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |