IEICE Technical Committee

Electronics-Silicon Devices and Materials(Date:2006/06/26)

Presentation

High Current, High Power, and High Linearity Ohmic Recess InGaP/InGaAs Doped Channel FETs(Session 7B Compound Semiconductor Devices III)

Feng-Tso Chien, Chien-Liang Chan, Chien-Nan Liao, Jin-Mu Yin, Hsien-Chin Chiu, Feng Tsun Chien,

[Date]2006/6/26
[Paper #]ED2006-95,SDM2006-103

Improvement of circuit-speed of HEMTs IC by reducing the parasitic capacitance(Session 7B Compound Semiconductor Devices III)

Kozo MAKIYAMA, Tsuyoshi TAKAHASHI, Toshihide SUZUKI, Toshihiro OHKI, Naoki KARA,

[Date]2006/6/26
[Paper #]ED2006-96,SDM2006-104

Experimental Four-Resonant-Tunneling-Diode (4RTD) Logic Circuits(Session 7B Compound Semiconductor Devices III)

Akinori YAMADA, Kentaro SUGAWARA, Taiki OKUYAMA, Takao WAHO, Tai DO, Victor KHORENKO, Werner PROST,

[Date]2006/6/26
[Paper #]ED2006-97,SDM2006-105

Characterization of Conductance Switching in Schottky-Wrap-Gate-Controlled Quantum Wire Transistors in A-Few-Electron Regime(Session 7B Compound Semiconductor Devices III)

Seiya KASAI, Yuta SHIRATORI, Tatsuya NAKAMURA, Takahiro TAMURA,

[Date]2006/6/26
[Paper #]ED2006-98,SDM2006-106

ArF Photo Resist Pattern Improvement by VUV Cure(Session 8A Silicon Devices V)

Hisakazu MIYATAKE, Takashi ITO,

[Date]2006/6/26
[Paper #]ED2006-99,SDM2006-107

Evaluation of [111]-Textured Cu Layer Formed on Thin Nb Barrier Layer on SiO_2(Session 8A Silicon Devices V)

Md. Maniruzzaman, Mayumi B. Takeyama, Masaru Sato, Yuichiro Hayasaka, Eiji Aoyagi, Atsushi Noya,

[Date]2006/6/26
[Paper #]ED2006-100,SDM2006-108

A Proposal of Twin-Channel (TC)-MOSFET and its Fabrication Process(Session 8A Silicon Devices V)

Shun-ichiro OHMI, Tetsushi SAKAI,

[Date]2006/6/26
[Paper #]ED2006-101,SDM2006-109

Study of 30-nm Double-Gate MOSFET with Halo Implantation technology(Session 8A Silicon Devices V)

Yuto MOMMA, Tetsuo ENDOH,

[Date]2006/6/26
[Paper #]ED2006-102,SDM2006-110

The Guideline of Tolerable Vth Fluctuation for MCML (MOS Current Mode Logic) Inverter Circuit(Session 8A Silicon Devices V)

Hyoung-jun NA, Maki SUEMITSU, Tetsuo ENDOH,

[Date]2006/6/26
[Paper #]ED2006-103,SDM2006-111

A Small Size Dual-band MEMS Antenna using LC Resonators(Session 8B Emerging Devices and Technologies II)

Ji-Hyuk KIM, Hyeon Cheol KIM, Kukjin CHUN,

[Date]2006/6/26
[Paper #]ED2006-104,SDM2006-112

RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage(Session 8B Emerging Devices and Technologies II)

Seong-Dae Lee, Byoung-Chul Jun, Sam-Dong Kim, Jin-Koo Rhee,

[Date]2006/6/26
[Paper #]ED2006-105,SDM2006-113

An Uncooled Infrared Detector with Electrically Floated Absorber Structure(Session 8B Emerging Devices and Technologies II)

Il-Woong Kwon, Yong-Soo Lee, Hee-Chul Lee,

[Date]2006/6/26
[Paper #]ED2006-106,SDM2006-114

Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors(Session 8B Emerging Devices and Technologies II)

W. C. Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, N. J. Wu,

[Date]2006/6/26
[Paper #]ED2006-107,SDM2006-115

Investigation of Growth Process of Carbon Nanotubes on Cobalt Catalysts using Infrared Absorption Spectroscopy(Session 8B Emerging Devices and Technologies II)

Yasuo Kimura, Takeru Numasawa, Mizuhisa Nihei, Michio Niwano,

[Date]2006/6/26
[Paper #]ED2006-108,SDM2006-116

Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI)

Y. Pei, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, Y. Nara,

[Date]2006/6/26
[Paper #]ED2006-109,SDM2006-117

The dependence of the intermediate nitridation states density at Si_3N_4/Si interface on surface Si atoms density(Session 9A Silicon Devices VI)

Masaaki Higuchi, Seiji Shinagawa, Akinobu Teramoto, Hiroshi Nohira, Takeo Hattori, Eiji Ikenaga, Shigetoshi Sugawa, Tadahiro Ohmi,

[Date]2006/6/26
[Paper #]ED2006-110,SDM2006-118

Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films(Session 9A Silicon Devices VI)

Tetsuo Endoh, Kazuyuki Hirose, Kenji Shiraishi,

[Date]2006/6/26
[Paper #]ED2006-111,SDM2006-119

Crystallization Enhancement of Ferroelectric PZT Thin Films by using Continuous-Wave Laser(Session 9A Silicon Devices VI)

Koji Kotani, Kiichiro Tago, Shin-Ichiro Kuroki, Takashi Ito,

[Date]2006/6/26
[Paper #]ED2006-112,SDM2006-120

Effects of Geometrical Structures on Broadband Characteristics in Finite-Sized On-Chip Self-Complementary Antennas(Session 9B Emerging Devices and Technologies III)

Hiroto Tomioka, Michihiko Suhara, Tsugunori Okumura,

[Date]2006/6/26
[Paper #]ED2006-113,SDM2006-121

Resonant terahertz detectors with lateral Schottky junctions(Session 9B Emerging Devices and Technologies III)

Akira SATOU, Victor RYZHII, Taiichi OTSUJI, Michael S. SHUR,

[Date]2006/6/26
[Paper #]ED2006-114,SDM2006-122