| Presentation | 2006/6/26 Evaluation of [111]-Textured Cu Layer Formed on Thin Nb Barrier Layer on SiO_2(Session 8A Silicon Devices V) Md. Maniruzzaman, Mayumi B. Takeyama, Masaru Sato, Yuichiro Hayasaka, Eiji Aoyagi, Atsushi Noya, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We prepared a Cu layer of [111] preferential orientation on an extremely thin Nb barrier deposited on SiO_2. The Cu/Nb(10nm)/SiO_2/Si specimen was characterized by X-ray diffraction analyses of ω-rocking curve, pole figure, glancing incidence X-ray reflectivity (GIXR), and transmission electron microscopy (TEM). Pronounced (111) reflection in a pole figure and a full width at half maximum value of ～5° in an ω-rocking curve from the Cu layer indicated formation of Cu [111] texture on the 10nm thick Nb barrier thin enough to apply to the 90nm node technology. The GIXR measurements and TEM observation indicated the stable textured layers without excess interdiffusion and/or reaction at interfaces upon annealing at 500℃ for 1h. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Cu [111] texture / Thin Nb layer / Preferential orientation / X-ray reflectivity |
| Paper # | ED2006-100,SDM2006-108 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of [111]-Textured Cu Layer Formed on Thin Nb Barrier Layer on SiO_2(Session 8A Silicon Devices V) |
| Sub Title (in English) | |
| Keyword(1) | Cu [111] texture |
| Keyword(2) | Thin Nb layer |
| Keyword(3) | Preferential orientation |
| Keyword(4) | X-ray reflectivity |
| 1st Author's Name | Md. Maniruzzaman |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology() |
| 2nd Author's Name | Mayumi B. Takeyama |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology |
| 3rd Author's Name | Masaru Sato |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology |
| 4th Author's Name | Yuichiro Hayasaka |
| 4th Author's Affiliation | Institute for Materials Research, Tohoku University |
| 5th Author's Name | Eiji Aoyagi |
| 5th Author's Affiliation | Institute for Materials Research, Tohoku University |
| 6th Author's Name | Atsushi Noya |
| 6th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology |
| Date | 2006/6/26 |
| Paper # | ED2006-100,SDM2006-108 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |