Presentation 2006/6/26
Resonant terahertz detectors with lateral Schottky junctions(Session 9B Emerging Devices and Technologies III)
Akira SATOU, Victor RYZHII, Taiichi OTSUJI, Michael S. SHUR,
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Abstract(in English) We propose a detector of terahertz (THz) radiation based on a high-electron mobility transistor (HEMT) with a lateral Schottky junction (LSJ) as the drain contact. The HEMT channel serves as a resonant cavity for the plasma oscillations induces by incoming THz radiation. Using the developed device model, we demonstrate that at the frequencies of THz radiation coinciding with the plasma resonant frequencies, the amplitude of the ac potential drop across the LSJ and, therefore, the rectified component of the current used for the detection can be resonantly large. This can result in the responsivity of the LSJ-HEMT detector under consideration significantly exceeding the responsivity of the standard Schottky detectors. The characteristics of LSJ-HEMT detectors are compared with those of LSJ-diode detectors with ungated channels.
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Keyword(in English) Terahertz radiation detector / plasma waves / Schottky junction
Paper # ED2006-114,SDM2006-122
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Committee SDM
Conference Date 2006/6/26(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Resonant terahertz detectors with lateral Schottky junctions(Session 9B Emerging Devices and Technologies III)
Sub Title (in English)
Keyword(1) Terahertz radiation detector
Keyword(2) plasma waves
Keyword(3) Schottky junction
1st Author's Name Akira SATOU
1st Author's Affiliation Computer Solid State Physics Laboratory, University of Aizu Tsuruga()
2nd Author's Name Victor RYZHII
2nd Author's Affiliation Computer Solid State Physics Laboratory, University of Aizu Tsuruga
3rd Author's Name Taiichi OTSUJI
3rd Author's Affiliation Research Institute of Electrical Communication, Tohoku University
4th Author's Name Michael S. SHUR
4th Author's Affiliation Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute
Date 2006/6/26
Paper # ED2006-114,SDM2006-122
Volume (vol) vol.106
Number (no) 138
Page pp.pp.-
#Pages 6
Date of Issue