Presentation 2006/6/26
Crystallization Enhancement of Ferroelectric PZT Thin Films by using Continuous-Wave Laser(Session 9A Silicon Devices VI)
Koji Kotani, Kiichiro Tago, Shin-Ichiro Kuroki, Takashi Ito,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Crystallization of ferroelectric PZT thin films has been greatly enhanced by using a continuous wave (CW) laser. A laser-beam was focused into a 180μm×40μm elliptical shape, and scanned on the PZT film in the direction of the minor axis at speeds of 0.1-10cm/sec. PZT thin films are annealed locally and the substrate temperature can be maintained low enough. Characterization of the films was made by in-plane. Consequently, for the PZT thin films of 50-150nm thickness, the perovskite phase was increased by using CW laser annealing while the increase of the pyrochlore phase was suppressed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) PZT / ferroelectric thin film / DPSS-CW laser
Paper # ED2006-112,SDM2006-120
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Committee SDM
Conference Date 2006/6/26(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Crystallization Enhancement of Ferroelectric PZT Thin Films by using Continuous-Wave Laser(Session 9A Silicon Devices VI)
Sub Title (in English)
Keyword(1) PZT
Keyword(2) ferroelectric thin film
Keyword(3) DPSS-CW laser
1st Author's Name Koji Kotani
1st Author's Affiliation Graduate School of Engineering, Tohoku University()
2nd Author's Name Kiichiro Tago
2nd Author's Affiliation Graduate School of Engineering, Tohoku University
3rd Author's Name Shin-Ichiro Kuroki
3rd Author's Affiliation Graduate School of Engineering, Tohoku University
4th Author's Name Takashi Ito
4th Author's Affiliation Graduate School of Engineering, Tohoku University
Date 2006/6/26
Paper # ED2006-112,SDM2006-120
Volume (vol) vol.106
Number (no) 138
Page pp.pp.-
#Pages 4
Date of Issue