| Presentation | 2006/6/26 Study of 30-nm Double-Gate MOSFET with Halo Implantation technology(Session 8A Silicon Devices V) Yuto MOMMA, Tetsuo ENDOH, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, the effect of Halo concentration on performance of 30nm gate length Double-Gate MOSFET with 30nm thin body Si is investigated by using two dimensional device simulator. We quantitatively show the dependency of electrical characteristic (subthreshold-slope, threshold voltage: Vth, drivability and leak current: Ion and Ioff) on the Halo concentration. This dependency can be explained by the reasons why the Halo concentration has directly effect on the potential distribution of the body. It is made clear that from viewpoint of body potential control, the design of Halo concentration is key technology for suppressing short-channel effect and improving subthreshold-slope, Ion and Ioff adjusting the Vth. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Double-Gate MOSFET / Halo implantation / Subthreshold-slope(S-factor) / Vth / Body potential |
| Paper # | ED2006-102,SDM2006-110 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study of 30-nm Double-Gate MOSFET with Halo Implantation technology(Session 8A Silicon Devices V) |
| Sub Title (in English) | |
| Keyword(1) | Double-Gate MOSFET |
| Keyword(2) | Halo implantation |
| Keyword(3) | Subthreshold-slope(S-factor) |
| Keyword(4) | Vth |
| Keyword(5) | Body potential |
| 1st Author's Name | Yuto MOMMA |
| 1st Author's Affiliation | Research Institute of Electrical Communication, Tohoku University() |
| 2nd Author's Name | Tetsuo ENDOH |
| 2nd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| Date | 2006/6/26 |
| Paper # | ED2006-102,SDM2006-110 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |