Presentation | 2006/6/26 Improvement of circuit-speed of HEMTs IC by reducing the parasitic capacitance(Session 7B Compound Semiconductor Devices III) Kozo MAKIYAMA, Tsuyoshi TAKAHASHI, Toshihide SUZUKI, Toshihiro OHKI, Naoki KARA, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We developed a process technology to remove parasitic capacitance around gate electrode originated in interconnecting layer of circuits. This process enabled us to increase the operating speed of integrated circuit, and we reported 90 GHz operation of a static T-FF circuit. We evaluated S-parameter precisely and confirmed the effect of reducing parasitic capacitance. This process technology has potential to further improve cutoff frequency, f_T, by further reducing the length of the gate electrode. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | CAVE / parasitic capacitance / circuit-speed |
Paper # | ED2006-96,SDM2006-104 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2006/6/26(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Improvement of circuit-speed of HEMTs IC by reducing the parasitic capacitance(Session 7B Compound Semiconductor Devices III) |
Sub Title (in English) | |
Keyword(1) | CAVE |
Keyword(2) | parasitic capacitance |
Keyword(3) | circuit-speed |
1st Author's Name | Kozo MAKIYAMA |
1st Author's Affiliation | Fujitsu Limited() |
2nd Author's Name | Tsuyoshi TAKAHASHI |
2nd Author's Affiliation | Fujitsu Limited |
3rd Author's Name | Toshihide SUZUKI |
3rd Author's Affiliation | Fujitsu Limited |
4th Author's Name | Toshihiro OHKI |
4th Author's Affiliation | Fujitsu Laboratories Ltd. |
5th Author's Name | Naoki KARA |
5th Author's Affiliation | Fujitsu Limited |
Date | 2006/6/26 |
Paper # | ED2006-96,SDM2006-104 |
Volume (vol) | vol.106 |
Number (no) | 138 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |