| Presentation | 2006/6/26 Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films(Session 9A Silicon Devices VI) Tetsuo Endoh, Kazuyuki Hirose, Kenji Shiraishi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Physical origin of stress-induced leakage currents (SILC) in ultra-thin SiO2 films is described. Assuming a two-step trap-assisted tunneling process accompanied with an energy relaxation process of trapped electrons, conditions of trap sites which are origin of SICL are quantitatively found. It is proposed that the trap site location and the trap state energy can be explained by mean-free-path of hole in SiO2 films and atomic structure of trap site by O vacancy model. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SILC / Stress-Induced Leakage Current / SiO2 / Ultra Thin Silicon Dioxide / mean-free-path / O vacancy model |
| Paper # | ED2006-111,SDM2006-119 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films(Session 9A Silicon Devices VI) |
| Sub Title (in English) | |
| Keyword(1) | SILC |
| Keyword(2) | Stress-Induced Leakage Current |
| Keyword(3) | SiO2 |
| Keyword(4) | Ultra Thin Silicon Dioxide |
| Keyword(5) | mean-free-path |
| Keyword(6) | O vacancy model |
| 1st Author's Name | Tetsuo Endoh |
| 1st Author's Affiliation | Research Institute of Electrical Communication, Tohoku University() |
| 2nd Author's Name | Kazuyuki Hirose |
| 2nd Author's Affiliation | Institute of Space and Astronautical Science, JAXA |
| 3rd Author's Name | Kenji Shiraishi |
| 3rd Author's Affiliation | Graduate School of Pure & Applied physics, University of Tsukuba |
| Date | 2006/6/26 |
| Paper # | ED2006-111,SDM2006-119 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |