| Presentation | 2006/6/26 A Proposal of Twin-Channel (TC)-MOSFET and its Fabrication Process(Session 8A Silicon Devices V) Shun-ichiro OHMI, Tetsushi SAKAI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Twin-Channel (TC)-MOSFET with twin Ω-gate Si channels and its fabrication process were proposed. The twin Ω-gate structures were considered to be fabricated by self-aligned process utilizing wet etching of SiN. Three-dimensional (3D) device simulation was performed for devices with 10nm x 10nm (T_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Twin-Channel / Self-align / Q-Gate / SiN / Wet Etching |
| Paper # | ED2006-101,SDM2006-109 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Proposal of Twin-Channel (TC)-MOSFET and its Fabrication Process(Session 8A Silicon Devices V) |
| Sub Title (in English) | |
| Keyword(1) | Twin-Channel |
| Keyword(2) | Self-align |
| Keyword(3) | Q-Gate |
| Keyword(4) | SiN |
| Keyword(5) | Wet Etching |
| 1st Author's Name | Shun-ichiro OHMI |
| 1st Author's Affiliation | Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology() |
| 2nd Author's Name | Tetsushi SAKAI |
| 2nd Author's Affiliation | Dept. of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
| Date | 2006/6/26 |
| Paper # | ED2006-101,SDM2006-109 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |