| Presentation | 2006/6/26 Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors(Session 8B Emerging Devices and Technologies II) W. C. Zhang, K. Nishiguchi, Y. Ono, A. Fujiwara, H. Yamaguchi, H. Inokawa, Y. Takahashi, N. J. Wu, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect-transistors (MOSFETs) alternately, allows current quantization at 20K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Single-electron / turnstile / MOSFET / accuracy |
| Paper # | ED2006-107,SDM2006-115 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors(Session 8B Emerging Devices and Technologies II) |
| Sub Title (in English) | |
| Keyword(1) | Single-electron |
| Keyword(2) | turnstile |
| Keyword(3) | MOSFET |
| Keyword(4) | accuracy |
| 1st Author's Name | W. C. Zhang |
| 1st Author's Affiliation | NTT Basic Research Laboratories:Institute of Semiconductor, Chinese Academy of Sciences() |
| 2nd Author's Name | K. Nishiguchi |
| 2nd Author's Affiliation | NTT Basic Research Laboratories |
| 3rd Author's Name | Y. Ono |
| 3rd Author's Affiliation | NTT Basic Research Laboratories |
| 4th Author's Name | A. Fujiwara |
| 4th Author's Affiliation | NTT Basic Research Laboratories |
| 5th Author's Name | H. Yamaguchi |
| 5th Author's Affiliation | NTT Basic Research Laboratories |
| 6th Author's Name | H. Inokawa |
| 6th Author's Affiliation | Shizuoka University |
| 7th Author's Name | Y. Takahashi |
| 7th Author's Affiliation | Hokkaido University |
| 8th Author's Name | N. J. Wu |
| 8th Author's Affiliation | Institute of Semiconductor, Chinese Academy of Sciences |
| Date | 2006/6/26 |
| Paper # | ED2006-107,SDM2006-115 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |