Presentation	2006/6/26 Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI) Y. Pei, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya, Y. Nara,
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Abstract(in English)	We have studied electrical and breakdown characteristics of 5nm-thick HfSiO_xN_y (Hf/(Hf+Si)=～0.43, nitrogen content=4.5～17.8 at. %) in Al-gate and NiSi-gate capacitors. For Al-gate capacitors, the flat band shift due to positive fixed charges is increased with nitrogen content in the dielectric layer. But in contrast, for NiSi-gate capacitors, the flat band is almost unchanged with the nitrogen content, which is presumably controlled by the quality of the interface between NiSi and the dielectric layer. The leakage current is markedly increased with an increase in the nitrogen content. Correspondingly, although the time to soft-breakdown, t_, is gradually decreased with increasing nitrogen content, the charge to soft-breakdown, Q_, is increased with the nitrogen content. For Al-gate capacitors, the Weibull slope of TDDB (time-dependent dielectric breakdown) under constant voltage stress (CVS) remains constant ～2 in the nitrogen content up to 12.5at.% and then decreased down to unity at 17.8at.%. It must be a condition critical to the formation of the percolation path for breakdown. In contrast, for NiSi gate capacitors, the Weibull slope smaller that unity was obtained, suggesting that structural inhomogeneity involving in defect generation is introduced during the NiSi gate fabrication but such a negative impact is reduced with nitrogen incorporation.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	HfSiO_xN_y / Metal Gate / Leakage Current / Charge Trapping / TDDB / Soft Breakdown
Paper #	ED2006-109,SDM2006-117
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Conference Information
Committee	SDM
Conference Date	2006/6/26(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI)
Sub Title (in English)
Keyword(1)	HfSiO_xN_y
Keyword(2)	Metal Gate
Keyword(3)	Leakage Current
Keyword(4)	Charge Trapping
Keyword(5)	TDDB
Keyword(6)	Soft Breakdown
1st Author's Name	Y. Pei
1st Author's Affiliation	Graduate School of Advanced Sciences of Matter, Hiroshima University()
2nd Author's Name	H. Murakami
2nd Author's Affiliation	Graduate School of Advanced Sciences of Matter, Hiroshima University
3rd Author's Name	S. Higashi
3rd Author's Affiliation	Graduate School of Advanced Sciences of Matter, Hiroshima University
4th Author's Name	S. Miyazaki
4th Author's Affiliation	Graduate School of Advanced Sciences of Matter, Hiroshima University
5th Author's Name	S. Inumiya
5th Author's Affiliation	Semicondutor Leading Edge Technologies, Inc.
6th Author's Name	Y. Nara
6th Author's Affiliation	Semicondutor Leading Edge Technologies, Inc.
Date	2006/6/26
Paper #	ED2006-109,SDM2006-117
Volume (vol)	vol.106
Number (no)	138
Page	pp.pp.-
#Pages	5
Date of Issue