| Presentation | 2006/6/26 ArF Photo Resist Pattern Improvement by VUV Cure(Session 8A Silicon Devices V) Hisakazu MIYATAKE, Takashi ITO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The dry etching resistance of 130nm L&S resist patterns was improved by irradiating the vacuum ultraviolet (VUV) light (wavelength of 172nm) to ArF resist patterns in N2 atmosphere. The film thickness of resist decreased by about 30% under VUV irradiation and the density of C=O bonds of the resist was decreased. The line width also reduced. However, the surface roughness of resist after dry etching improved from 6.2nm rms which value was obtained under no cure, to 1.9nm rms which was obtained under VUV irradiation. The line width shrinkage by the electron beam irradiation of CD-SEM was greatly improved from 9nm to 2nm by using VUV Cure. Moreover, LER (Line Edge Roughness) of resist patterns was approximately 2nm improved from 8.4nm that is under no cure case, to 6.5nm under VUV irradiation. Using VUV Cure, the dry etching pattern of a SiN film showed near the rectangle cross sectional view, and indicated almost the same LER value as the resist mask pattern. The VUV Cure technique is an attractive method of fine resist pattern fabrication by ArF lithography. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | VUV cure / dry etching resistance / ArF / methacrylate / acrylate / resist / UV cure / LER / CD-SEM / Line width shrinkage |
| Paper # | ED2006-99,SDM2006-107 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | ArF Photo Resist Pattern Improvement by VUV Cure(Session 8A Silicon Devices V) |
| Sub Title (in English) | |
| Keyword(1) | VUV cure |
| Keyword(2) | dry etching resistance |
| Keyword(3) | ArF |
| Keyword(4) | methacrylate |
| Keyword(5) | acrylate |
| Keyword(6) | resist |
| Keyword(7) | UV cure |
| Keyword(8) | LER |
| Keyword(9) | CD-SEM |
| Keyword(10) | Line width shrinkage |
| 1st Author's Name | Hisakazu MIYATAKE |
| 1st Author's Affiliation | Advanced Technology Planning (Tokyo), Electronic components, Sharp Corporation() |
| 2nd Author's Name | Takashi ITO |
| 2nd Author's Affiliation | Department of Electronics Engineering Graduate School of Engineering, Tohoku University |
| Date | 2006/6/26 |
| Paper # | ED2006-99,SDM2006-107 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 6 |
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