| Presentation | 2006/6/26 The dependence of the intermediate nitridation states density at Si_3N_4/Si interface on surface Si atoms density(Session 9A Silicon Devices VI) Masaaki Higuchi, Seiji Shinagawa, Akinobu Teramoto, Hiroshi Nohira, Takeo Hattori, Eiji Ikenaga, Shigetoshi Sugawa, Tadahiro Ohmi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We clarify the difference of intermediate nitridation states density of Si for Si_3N_4 films formed on Si(100), Si(110) and Si(111). The Si_3N_4 films were grown by NH* in microwave excited high-density plasma. The intermediate nitridation states density of Si for Si_3N_4 films were calculated by measuring 1050eV photon excited Si 2p photoelectron spectra with energy resolution of 100meV at soft-x-ray undulator beam line of SPring-8. It is found that the intermediate nitridation states density of Si for Si_3N_4 films formed on Si(100):5.06×10^<14> atoms/cm^2 is largest in those of Si for Si_3N_4 films formed on Si(100), Si(110) and Si(111). And it is found that the intermediate nitridation states density becomes reversely proportional to Si surface density. It is considered that the compressive stress of Si_3N_4 film becomes smaller, as the Si surface density becomes lager. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | direct nitridation / surface orientation / intermediate nitridation states / silicon nitride |
| Paper # | ED2006-110,SDM2006-118 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/6/26(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The dependence of the intermediate nitridation states density at Si_3N_4/Si interface on surface Si atoms density(Session 9A Silicon Devices VI) |
| Sub Title (in English) | |
| Keyword(1) | direct nitridation |
| Keyword(2) | surface orientation |
| Keyword(3) | intermediate nitridation states |
| Keyword(4) | silicon nitride |
| 1st Author's Name | Masaaki Higuchi |
| 1st Author's Affiliation | Graduate School of Engineering, Tohoku University() |
| 2nd Author's Name | Seiji Shinagawa |
| 2nd Author's Affiliation | Musashi Institute of Technology |
| 3rd Author's Name | Akinobu Teramoto |
| 3rd Author's Affiliation | New Industry Creation Hachery Center, Tohoku University |
| 4th Author's Name | Hiroshi Nohira |
| 4th Author's Affiliation | Musashi Institute of Technology |
| 5th Author's Name | Takeo Hattori |
| 5th Author's Affiliation | Musashi Institute of Technology:New Industry Creation Hachery Center, Tohoku University |
| 6th Author's Name | Eiji Ikenaga |
| 6th Author's Affiliation | JASRI SPring8 |
| 7th Author's Name | Shigetoshi Sugawa |
| 7th Author's Affiliation | Graduate School of Engineering, Tohoku University |
| 8th Author's Name | Tadahiro Ohmi |
| 8th Author's Affiliation | New Industry Creation Hachery Center, Tohoku University |
| Date | 2006/6/26 |
| Paper # | ED2006-110,SDM2006-118 |
| Volume (vol) | vol.106 |
| Number (no) | 138 |
| Page | pp.pp.- |
| #Pages | 6 |
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