Electronics-Electron Devices(Date:2007/06/18)

Presentation
Design of HEMT Comparators for Ultrahigh-Speed A/D Conversion

Hiroshi Watanabe,  Shunsuke Nakamura,  Takao Waho,  

[Date]2007/6/18
[Paper #]ED2007-65,SDM2007-70
Si/SiGe Continuous Epitaxial Growth Technology for High-Speed SiGe HBTs

Katsuya ODA,  

[Date]2007/6/18
[Paper #]ED2007-66,SDM2007-71
Surface passivations of AlGaN/GaN HEMTs using Remote-mode PECVD

Jin Cherl Her,  Hyun Jun Cho,  Kwang Seok Seo,  

[Date]2007/6/18
[Paper #]ED2007-67,SDM2007-72
Microwave dielectric properties of Mg_4Ta_2O_9 ceramics with TiO_2 for DRO

Jae-Sik Kim,  Young-Hie Lee,  Seon-Gi Bae,  Ki-Won Ryu,  

[Date]2007/6/18
[Paper #]ED2007-68,SDM2007-73
High-performance and reliable InP/InGaAs HBTs operating at high current density

Shoji YAMAHATA,  Norihide KASHIO,  Kenji KURISHIMA,  YoshinoYoshino K. FUKAI,  Yasuyuki MIYAMOTO,  

[Date]2007/6/18
[Paper #]ED2007-69,SDM2007-74
A Study on MgO-Ta_2O_5 System Ceramics for Microwave Component Application

Jae-Sik Jae-Sik,  Young-Hie Lee,  Eui-Sun Choi,  Ki-Won Ryu,  

[Date]2007/6/18
[Paper #]ED2007-70,SDM2007-75
AlGaN/GaN Power Transistors for power switching applications

Yasuhiro Uemoto,  Masahiro Hikita,  Hiroaki Ueno,  Tomohiro Murata,  Hisayoshi Matsuo,  Hidetoshi Ishida,  Manabu Yanagihara,  Tetsuzo Ueda,  Tsuyoshi Tanaka,  Daisuke Ueda,  

[Date]2007/6/18
[Paper #]ED2007-71,SDM2007-76
Low-Frequency Noise Characterizations of Back-gate ZnO Nanorod Field-Effect Transistor Structure

Jungil LEE,  Byung-Yong YU,  Chul Ho LEE,  Gyu-Chul YI,  Gyu-Tae KIM,  Gerard GHIBAUDO,  

[Date]2007/6/18
[Paper #]ED2007-72,SDM2007-77
Electrical Characterization of Indium-rich InGaN/GaN Multi Quantum Wells

Jin Soak KIM,  Yun-IL LEE,  Limkyung HA,  Eun Kyu KIM,  Hee Jin KIM,  Euijoon YOON,  

[Date]2007/6/18
[Paper #]ED2007-73,SDM2007-78
Analysis of plasma etching damages in GaN by excess carrier lifetime measurements

Masashi KATO,  Keisuke FUKUSHIMA,  Masaya ICHIMURA,  Masakazu KANECHIKA,  Osamu ISHIGURO,  Tetsu KACHI,  

[Date]2007/6/18
[Paper #]ED2007-74,SDN2007-79
Characterization of plasma etching effects on p-type GaN by capacitance measurements of Schottky diodes

Masashi KATO,  Kazuki MIKAMO,  Masaya ICHIMURA,  Masakazu KANECHIKA,  Osamu ISHIGURO,  Tetsu KACHI,  

[Date]2007/6/18
[Paper #]ED2007-75,SDM2007-80
Silicon Photonic Devices with Ge Quantum Dots as Light Sources

Yasuhiro SHIRAKI,  Kenji KAWAGUCHI,  Jinsong XIA,  

[Date]2007/6/18
[Paper #]ED2007-76,SDM2007-81
Effect of a guard-ring on the leakage current in a Si-PIN X-ray detector for a single photon counting sensor

Jin-Young Kim,  Jung-Ho Seo,  Hyun-Woo Lim,  Chang-Hyun Ban,  Kyu-Chae Kim,  Jin-Goo Park,  Seong-Chae Jun,  Bong-Hui Kim,  Seung-Oh Jin,  Young Hu,  

[Date]2007/6/18
[Paper #]ED2007-77,SDM2007-82
Functional Devices Based on Quantum-sized Nanosilicon

Nobuyoshi Koshida,  Bernard Gelloz,  

[Date]2007/6/18
[Paper #]ED2007-78,SDM2007-83
Impact of Boron Doping to Si Quantum Dots on Light Emission Properties

Kazuki Okuyama,  Katsunori Makihara,  Akio Ohta,  Hideki Murakami,  Mitsuhisa Ikeda,  Seiichiro Higashi,  Seiichi Miyazaki,  

[Date]2007/6/18
[Paper #]ED2007-79,SDM2007-84
Si Single-Electron FETs for Single-Photon Detection

Michiharu TABE,  Ratno NURYADI,  Zainal BURHANUDIN,  

[Date]2007/6/18
[Paper #]ED2007-80,SDM2007-85
Control of Electrical Properties of Carbon Nanotube FETs

Takashi Mizutani,  

[Date]2007/6/18
[Paper #]ED2007-81,SDM2007-86
Room-temperature-operating single-electron devices using silicon nanowire MOSFET

Katsuhiko NISHIGUCHI,  Yukinori ONO,  Akira FUJIWARA,  Hiroshi INOKAWA,  Yasuo TAKAHASHI,  

[Date]2007/6/18
[Paper #]ED2007-82,SDM2007-87
Design and Simulation of Single Hole Transistor with Tunneling Barrier formed by Fixed Charge

Dong-Seup Lee,  Sangwoo Kang,  Joung-eob Lee,  Byung-Gook Park,  

[Date]2007/6/18
[Paper #]ED2007-83,SDM2007-88
Silicon-TFT-based active-matrix field emitter arrays with a memory function

Seigo Kanemaru,  Masayoshi Nagao,  

[Date]2007/6/18
[Paper #]ED2007-84,SDM2007-89
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