Presentation | 2007/6/18 Silicon-TFT-based active-matrix field emitter arrays with a memory function Seigo Kanemaru, Masayoshi Nagao, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A field emission array (FEA) that is controlled by a poly-silicon thin film transistor (TFT) with a memory function was developed for the application of an ultrahigh luminance field emission display. The fabricated FEA has the following features: a silicon emitter was covered with a HfC thin layer to exhibit a long lifetime. An apex of the emitter was sharpened with argon ion etching followed by CHF_3 plasma etching at low temperature. A Si FEA was integrated with a poly-Si TFT, and a memory operation of field emission was demonstrated successfully. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Field Emitter Array / Field Emission Display / FED / poly-silicon TFT |
Paper # | ED2007-84,SDM2007-89 |
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Conference Information | |
Committee | ED |
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Conference Date | 2007/6/18(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Silicon-TFT-based active-matrix field emitter arrays with a memory function |
Sub Title (in English) | |
Keyword(1) | Field Emitter Array |
Keyword(2) | Field Emission Display |
Keyword(3) | FED |
Keyword(4) | poly-silicon TFT |
1st Author's Name | Seigo Kanemaru |
1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST)() |
2nd Author's Name | Masayoshi Nagao |
2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
Date | 2007/6/18 |
Paper # | ED2007-84,SDM2007-89 |
Volume (vol) | vol.107 |
Number (no) | 110 |
Page | pp.pp.- |
#Pages | 4 |
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