Presentation 2007/6/18
Silicon-TFT-based active-matrix field emitter arrays with a memory function
Seigo Kanemaru, Masayoshi Nagao,
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Abstract(in English) A field emission array (FEA) that is controlled by a poly-silicon thin film transistor (TFT) with a memory function was developed for the application of an ultrahigh luminance field emission display. The fabricated FEA has the following features: a silicon emitter was covered with a HfC thin layer to exhibit a long lifetime. An apex of the emitter was sharpened with argon ion etching followed by CHF_3 plasma etching at low temperature. A Si FEA was integrated with a poly-Si TFT, and a memory operation of field emission was demonstrated successfully.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Field Emitter Array / Field Emission Display / FED / poly-silicon TFT
Paper # ED2007-84,SDM2007-89
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Conference Information
Committee ED
Conference Date 2007/6/18(1days)
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Registration To Electron Devices (ED)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Silicon-TFT-based active-matrix field emitter arrays with a memory function
Sub Title (in English)
Keyword(1) Field Emitter Array
Keyword(2) Field Emission Display
Keyword(3) FED
Keyword(4) poly-silicon TFT
1st Author's Name Seigo Kanemaru
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)()
2nd Author's Name Masayoshi Nagao
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
Date 2007/6/18
Paper # ED2007-84,SDM2007-89
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 4
Date of Issue