| Presentation | 2007/6/18 Characterization of plasma etching effects on p-type GaN by capacitance measurements of Schottky diodes Masashi KATO, Kazuki MIKAMO, Masaya ICHIMURA, Masakazu KANECHIKA, Osamu ISHIGURO, Tetsu KACHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power devices, formation of p-type layer and plasma etching process are essential. In this work, we characterize plasma etching effects to p-type GaN using Schottky diodes. We employed deep level transient spectroscopy and photocapacitance measurements. As a result, we observed a deep level located Ec-0.25 eV in both n-type and p-type GaN. It is considered that this level corresponds to a deep level introduced by nitrogen vacancy and increases series resistance of p-type GaN. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / plasma etching / Schottky diode / DLTS / photocapacitance |
| Paper # | ED2007-75,SDM2007-80 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of plasma etching effects on p-type GaN by capacitance measurements of Schottky diodes |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | plasma etching |
| Keyword(3) | Schottky diode |
| Keyword(4) | DLTS |
| Keyword(5) | photocapacitance |
| 1st Author's Name | Masashi KATO |
| 1st Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology() |
| 2nd Author's Name | Kazuki MIKAMO |
| 2nd Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology |
| 3rd Author's Name | Masaya ICHIMURA |
| 3rd Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology |
| 4th Author's Name | Masakazu KANECHIKA |
| 4th Author's Affiliation | Toyota Central R&D Laboratories., Inc. |
| 5th Author's Name | Osamu ISHIGURO |
| 5th Author's Affiliation | Toyota Central R&D Laboratories., Inc. |
| 6th Author's Name | Tetsu KACHI |
| 6th Author's Affiliation | Toyota Central R&D Laboratories., Inc. |
| Date | 2007/6/18 |
| Paper # | ED2007-75,SDM2007-80 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |