| Presentation | 2007/6/18 Room-temperature-operating single-electron devices using silicon nanowire MOSFET Katsuhiko NISHIGUCHI, Yukinori ONO, Akira FUJIWARA, Hiroshi INOKAWA, Yasuo TAKAHASHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, we report the development of devices for single-electron transfer and detection at room temperature, using silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFETs). Single electrons are transferred to a storage node (SN) by modulating the potential barrier in the channel of the MOSFETs. Another MOSFET, located close to the SN, detects electrons transferred into the SN with single-electron resolution. These transfer and detection functions were applied to a digital-to-analog converter, gain-cell memory, and infrared sensor. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Single electron / transfer / detection / MOSFET |
| Paper # | ED2007-82,SDM2007-87 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Room-temperature-operating single-electron devices using silicon nanowire MOSFET |
| Sub Title (in English) | |
| Keyword(1) | Single electron |
| Keyword(2) | transfer |
| Keyword(3) | detection |
| Keyword(4) | MOSFET |
| 1st Author's Name | Katsuhiko NISHIGUCHI |
| 1st Author's Affiliation | NTT Basic Research Labs., NTT Corporation() |
| 2nd Author's Name | Yukinori ONO |
| 2nd Author's Affiliation | NTT Basic Research Labs., NTT Corporation |
| 3rd Author's Name | Akira FUJIWARA |
| 3rd Author's Affiliation | NTT Basic Research Labs., NTT Corporation |
| 4th Author's Name | Hiroshi INOKAWA |
| 4th Author's Affiliation | Research Institute of Electronics, Shizuoka University |
| 5th Author's Name | Yasuo TAKAHASHI |
| 5th Author's Affiliation | Graduate School of Information Science and Technology, Hokkaido University |
| Date | 2007/6/18 |
| Paper # | ED2007-82,SDM2007-87 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |