| Presentation | 2007/6/18 Analysis of plasma etching damages in GaN by excess carrier lifetime measurements Masashi KATO, Keisuke FUKUSHIMA, Masaya ICHIMURA, Masakazu KANECHIKA, Osamu ISHIGURO, Tetsu KACHI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Gallium nitride (GaN) is a promising material for high power and high frequency devices, and the etching processes are necessary in bipolar device fabrication. Inductively coupled plasma (ICP) etching is one of the plasma etching technique which forms damaged layer on surface of GaN. In this work, we have measured the excess carrier lifetime in ICP etched GaN with the microwave photoconductivity decay (μ-PCD) method. We analyzed deep levels introduced by ICP etching by measuring temperature dependence of decay curves. We also discussed about effects of annealing by observing the excess carrier lifetime. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gallium nitride / carrier lifetime / μ-PCD method / plasma etching / temperature dependence / annealing |
| Paper # | ED2007-74,SDN2007-79 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of plasma etching damages in GaN by excess carrier lifetime measurements |
| Sub Title (in English) | |
| Keyword(1) | Gallium nitride |
| Keyword(2) | carrier lifetime |
| Keyword(3) | μ-PCD method |
| Keyword(4) | plasma etching |
| Keyword(5) | temperature dependence |
| Keyword(6) | annealing |
| 1st Author's Name | Masashi KATO |
| 1st Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Nagoya institute of technology() |
| 2nd Author's Name | Keisuke FUKUSHIMA |
| 2nd Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Nagoya institute of technology |
| 3rd Author's Name | Masaya ICHIMURA |
| 3rd Author's Affiliation | Department of Engineering Physics, Electronics and Mechanics, Nagoya institute of technology |
| 4th Author's Name | Masakazu KANECHIKA |
| 4th Author's Affiliation | Toyota Central R&D Labs., Inc. |
| 5th Author's Name | Osamu ISHIGURO |
| 5th Author's Affiliation | Toyota Central R&D Labs., Inc. |
| 6th Author's Name | Tetsu KACHI |
| 6th Author's Affiliation | Toyota Central R&D Labs., Inc. |
| Date | 2007/6/18 |
| Paper # | ED2007-74,SDN2007-79 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |