| Presentation | 2007/6/18 Control of Electrical Properties of Carbon Nanotube FETs Takashi Mizutani, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Carbon nanotubu field-effect transistors (CNT-FETs) fabricated using various kinds of contact metals with different work function have shown work function dependent conduction behavior, which is consistent with the Schottky barrier transistor model where the Schottky barrier formed at the contact dominates the drain current. Quasi pn diodes without any impurity doping fabricated using different contact metals with different work function for anode and cathode electrodes showed rectifying behavior. It has also been shown by measuring electrical properties of multi-terminal devices that the electron transport between the CNT and the contact occurs at the edge of the contact electrode. For the p-type doping, we studied F_4TCNQ chemical doping. The chemical doping was effective in improving the top-gate FET performance. We have also shown based on the measurement of CNT-FET I-V characteristics that the semiconducting CNTs are preferentially grown by grid-inserted PECVD. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Carbon nanotube / FET / work function / Schottky barrier transistor model / doping / preferential growth / semiconducting nanotube |
| Paper # | ED2007-81,SDM2007-86 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Control of Electrical Properties of Carbon Nanotube FETs |
| Sub Title (in English) | |
| Keyword(1) | Carbon nanotube |
| Keyword(2) | FET |
| Keyword(3) | work function |
| Keyword(4) | Schottky barrier transistor model |
| Keyword(5) | doping |
| Keyword(6) | preferential growth |
| Keyword(7) | semiconducting nanotube |
| 1st Author's Name | Takashi Mizutani |
| 1st Author's Affiliation | Department of Quantum Engineering, Nagoya University() |
| Date | 2007/6/18 |
| Paper # | ED2007-81,SDM2007-86 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |