Presentation | 2007/6/18 Functional Devices Based on Quantum-sized Nanosilicon Nobuyoshi Koshida, Bernard Gelloz, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The technological potential of quantum-sized nanocrystalline silicon (nc-Si) devices is presented in terms of photonic, electronic, and acoustic applications. In nc-Si, the basic property of bulk silicon is totally modified by quantum confinement effect, and then various useful functions such as efficient visible luminescence at room temperature, ballistic electron emission, and thermally-induced ultrasonic emission. Some topics on the characteristics of these effects are reported including their device implementations. The development toward possible functional integration is also discussed. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Silicon / Nanocrystal / Quantum confinement / Luminescence / Ballistic electron / Ultrasonic emission |
Paper # | ED2007-78,SDM2007-83 |
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Committee | ED |
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Conference Date | 2007/6/18(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Functional Devices Based on Quantum-sized Nanosilicon |
Sub Title (in English) | |
Keyword(1) | Silicon |
Keyword(2) | Nanocrystal |
Keyword(3) | Quantum confinement |
Keyword(4) | Luminescence |
Keyword(5) | Ballistic electron |
Keyword(6) | Ultrasonic emission |
1st Author's Name | Nobuyoshi Koshida |
1st Author's Affiliation | Graduate School of Engineering, Tokyo University of A & T() |
2nd Author's Name | Bernard Gelloz |
2nd Author's Affiliation | Graduate School of Engineering, Tokyo University of A & T |
Date | 2007/6/18 |
Paper # | ED2007-78,SDM2007-83 |
Volume (vol) | vol.107 |
Number (no) | 110 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |