| Presentation | 2007/6/18 Si/SiGe Continuous Epitaxial Growth Technology for High-Speed SiGe HBTs Katsuya ODA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A continuous-epitaxial-growth technique, using a cold-wall rapid thermal UHV/CVD system, for Si/SiGe multilayers containing different doping types has been developed. Extremely high phosphorous-doping in the silicon layer grown by LPCVD with Si_2H_6 can be achieved without high-temperature activation annealing, and good crystallinity of the Si layer results in very low resistivity. High-temperature surface cleaning prior to the epitaxial growth can be omitted, since contamination occurring during wafer transfer was minimized by using a UHV transfer chamber. Good crystallinity of the HBT structure after the whole fabrication process was confirmed by reciprocal lattice space mapping of high-resolution X-ray diffraction. These results indicate that the developed continuous-epitaxial-growth technique gives a major advantage in maintaining crystal quality of Si/SiGe multi-layers for future ultra-high-speed devices. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Continuous-epitaxial-growth / Rapid thermal UHV/CVD / Crystallinity / SiGe HBT |
| Paper # | ED2007-66,SDM2007-71 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Si/SiGe Continuous Epitaxial Growth Technology for High-Speed SiGe HBTs |
| Sub Title (in English) | |
| Keyword(1) | Continuous-epitaxial-growth |
| Keyword(2) | Rapid thermal UHV/CVD |
| Keyword(3) | Crystallinity |
| Keyword(4) | SiGe HBT |
| 1st Author's Name | Katsuya ODA |
| 1st Author's Affiliation | Central Research Laboratory, Hitachi Ltd.() |
| Date | 2007/6/18 |
| Paper # | ED2007-66,SDM2007-71 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |