| Presentation | 2007/6/18 Impact of Boron Doping to Si Quantum Dots on Light Emission Properties Kazuki Okuyama, Katsunori Makihara, Akio Ohta, Hideki Murakami, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have multiply-stacked Si-QDs in SiO_2 by repeating a process sequence of Si dot formation by LPCVD using pure SiH_4 followed by surface oxidation and modification by remote plasmas in which pulse injection of either B_2H_6 or PH_3 during the Si dot formation leads to δ-doping to Si-QDs. In this work, we focused on boron doped Si-QDs/SiO_2 stacked structure on ～4nm-thick SiO_2/p-Si(100) and studied the influence of B δ-doping into Si-QDs on their luminescence properties in comparison to pure and P-doped Si-QDs. From hard x-ray photoemission measurements, we confirmed B or P incorporation into Si-QDs. Under bias conditions for both electron injection from a semitransparent Au top electrode and hole injection from the p-Si(100) substrate, the electroluminescence (EL), in the visible and near-infrared regions at room temperature was observed and the emission intensity increased with the current over the threshold bias of 3V. It should be noted that the B δ-doping to Si-QDs significantly reduce the threshold voltage for EL and enhance the emission intensity by about three and two orders of magnitude under the same bias condition compared with pure and P-doped Si-QDs, respectively. This result indicates that B acceptors can contribute to an increase of charge injection rate in EL. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si-QDs / B-doping / Electroluminescence |
| Paper # | ED2007-79,SDM2007-84 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Impact of Boron Doping to Si Quantum Dots on Light Emission Properties |
| Sub Title (in English) | |
| Keyword(1) | Si-QDs |
| Keyword(2) | B-doping |
| Keyword(3) | Electroluminescence |
| 1st Author's Name | Kazuki Okuyama |
| 1st Author's Affiliation | Grad. School of Advanced Sciences of Matter, Hiroshima University() |
| 2nd Author's Name | Katsunori Makihara |
| 2nd Author's Affiliation | Grad. School of Advanced Sciences of Matter, Hiroshima University |
| 3rd Author's Name | Akio Ohta |
| 3rd Author's Affiliation | Grad. School of Advanced Sciences of Matter, Hiroshima University |
| 4th Author's Name | Hideki Murakami |
| 4th Author's Affiliation | Grad. School of Advanced Sciences of Matter, Hiroshima University |
| 5th Author's Name | Mitsuhisa Ikeda |
| 5th Author's Affiliation | Grad. School of Advanced Sciences of Matter, Hiroshima University |
| 6th Author's Name | Seiichiro Higashi |
| 6th Author's Affiliation | Grad. School of Advanced Sciences of Matter, Hiroshima University |
| 7th Author's Name | Seiichi Miyazaki |
| 7th Author's Affiliation | Grad. School of Advanced Sciences of Matter, Hiroshima University |
| Date | 2007/6/18 |
| Paper # | ED2007-79,SDM2007-84 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |