| Presentation | 2007/6/18 Effect of a guard-ring on the leakage current in a Si-PIN X-ray detector for a single photon counting sensor Jin-Young Kim, Jung-Ho Seo, Hyun-Woo Lim, Chang-Hyun Ban, Kyu-Chae Kim, Jin-Goo Park, Seong-Chae Jun, Bong-Hui Kim, Seung-Oh Jin, Young Hu, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | PIN diodes for digital X-ray detection as a single photon counting sensor were fabricated on a floating-zone (FZ) n-type (111), high resistivity (5～10kΩ・cm) silicon substrates (500μm thickness). Its electrical properties such as the leakage current and the breakdown voltage were characterized. The size of pixels was 100μm×100μm. The p+ guard-ring was formed around the active area to reduce the leakage current. After the p+ active area and guard-ring were fabricated by the ion-implantation, the extrinsic-gettering on the wafer backside was performed to reduce the leakage current by n+ ion-implantation. PECVD oxide was deposited as an IMD layer on front side and then, metal lines were formed on both sides of wafers. The leakage current of detectors was significantly reduced with a guard-ring when compared with that without a guard ring. The leakage current showed the strong dependency on the gap distance between the active area and the guard ring. It was possible to achieve the leakage current lower than 0.2 nA/cm^2. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | digital x-ray detection / leakage current / guard-ring / break-down voltage |
| Paper # | ED2007-77,SDM2007-82 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of a guard-ring on the leakage current in a Si-PIN X-ray detector for a single photon counting sensor |
| Sub Title (in English) | |
| Keyword(1) | digital x-ray detection |
| Keyword(2) | leakage current |
| Keyword(3) | guard-ring |
| Keyword(4) | break-down voltage |
| 1st Author's Name | Jin-Young Kim |
| 1st Author's Affiliation | Department of Metallurgy and Materials Engineering, Micro Biochip Center, Hanyang University() |
| 2nd Author's Name | Jung-Ho Seo |
| 2nd Author's Affiliation | Department of Metallurgy and Materials Engineering, Micro Biochip Center, Hanyang University |
| 3rd Author's Name | Hyun-Woo Lim |
| 3rd Author's Affiliation | Department of Metallurgy and Materials Engineering, Micro Biochip Center, Hanyang University |
| 4th Author's Name | Chang-Hyun Ban |
| 4th Author's Affiliation | Department of Metallurgy and Materials Engineering, Micro Biochip Center, Hanyang University |
| 5th Author's Name | Kyu-Chae Kim |
| 5th Author's Affiliation | Department of Metallurgy and Materials Engineering, Micro Biochip Center, Hanyang University |
| 6th Author's Name | Jin-Goo Park |
| 6th Author's Affiliation | Department of Metallurgy and Materials Engineering, Micro Biochip Center, Hanyang University |
| 7th Author's Name | Seong-Chae Jun |
| 7th Author's Affiliation | Korea Electrotechnology Research Institute |
| 8th Author's Name | Bong-Hui Kim |
| 8th Author's Affiliation | Korea Electrotechnology Research Institute |
| 9th Author's Name | Seung-Oh Jin |
| 9th Author's Affiliation | Korea Electrotechnology Research Institute |
| 10th Author's Name | Young Hu |
| 10th Author's Affiliation | Korea Electrotechnology Research Institute |
| Date | 2007/6/18 |
| Paper # | ED2007-77,SDM2007-82 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 5 |
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