| Presentation | 2007/6/18 Low-Frequency Noise Characterizations of Back-gate ZnO Nanorod Field-Effect Transistor Structure Jungil LEE, Byung-Yong YU, Chul Ho LEE, Gyu-Chul YI, Gyu-Tae KIM, Gerard GHIBAUDO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report the results of low-frequency noise characterizations of back-gate n-channel ZnO nanorod field-effect transistor (FET) structure at room temperature. The noise in source-drain current was measured at zero gate bias and different source-drain biases. The power spectral density of noise current showed 1/f behavior superposed with generation-recombination noise. The corner frequency of the generation-recombination noise component varied with the source-drain bias. The power index of current dependence of the noise density at 10 Hz was, about 1.5. The Hooge parameter obtained from the noise density at 10 Hz was comparable to or smaller than carbon nanotube transistors and much higher than those of silicon nanowires and conventional silicon transistors, indicating special attention should be addressed in device applications. Possible noise sources will be discussed with different models. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ZnO nanorod / Field-effect transistors / Low-frequency noise / Oxide traps / Surface states |
| Paper # | ED2007-72,SDM2007-77 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-Frequency Noise Characterizations of Back-gate ZnO Nanorod Field-Effect Transistor Structure |
| Sub Title (in English) | |
| Keyword(1) | ZnO nanorod |
| Keyword(2) | Field-effect transistors |
| Keyword(3) | Low-frequency noise |
| Keyword(4) | Oxide traps |
| Keyword(5) | Surface states |
| 1st Author's Name | Jungil LEE |
| 1st Author's Affiliation | Nano Device Research Center, Korea Institute of Science and Technology() |
| 2nd Author's Name | Byung-Yong YU |
| 2nd Author's Affiliation | Division of Materials Research, Korea Institute of Science and Technology |
| 3rd Author's Name | Chul Ho LEE |
| 3rd Author's Affiliation | National CRI Center for Semiconductor Nanorods and Department of Materials Science and Engineering, Pohang University of Science and technology |
| 4th Author's Name | Gyu-Chul YI |
| 4th Author's Affiliation | National CRI Center for Semiconductor Nanorods and Department of Materials Science and Engineering, Pohang University of Science and technology |
| 5th Author's Name | Gyu-Tae KIM |
| 5th Author's Affiliation | School of Electrical Engineering, Korea University |
| 6th Author's Name | Gerard GHIBAUDO |
| 6th Author's Affiliation | IMEP, Minatec-INPG |
| Date | 2007/6/18 |
| Paper # | ED2007-72,SDM2007-77 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |