| Presentation | 2007/6/18 High-performance and reliable InP/InGaAs HBTs operating at high current density Shoji YAMAHATA, Norihide KASHIO, Kenji KURISHIMA, YoshinoYoshino K. FUKAI, Yasuyuki MIYAMOTO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | This paper describes the high-performance and reliability of scaled InP/InGaAs HBTs with a passivation ledge structure and a refractory tungsten (W)-based emitter contact metal. The ledge structure is effective in suppressing surface recombination currents at the emitter-mesa periphery, and the W emitter contact metal is advantageous for prevention of emitter electrode metal migration. We compare the dc and high-frequency characteristics of four InP/InGaAs HBTs with different n-doping levels in the InP emitter layer (n_E) for the purpose of optimizing the emitter design both for performance and reliability. The InP-HBT with relatively high n_E shows a reasonable current gain (β) of 50 and an excellent unity gain cutoff frequency (ft) of 270 GHz. Additionally, accelerated life tests for this InP-HBT reveal no rapid decrease in β up to 100 hours in spite of a collector current density (J_c) as high as 5mA/μm^2 at the ambient temperature of 195℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HBT / InP/InGaAs / high-performance / reliability / passivation ledge structure / tungsten-metal |
| Paper # | ED2007-69,SDM2007-74 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-performance and reliable InP/InGaAs HBTs operating at high current density |
| Sub Title (in English) | |
| Keyword(1) | HBT |
| Keyword(2) | InP/InGaAs |
| Keyword(3) | high-performance |
| Keyword(4) | reliability |
| Keyword(5) | passivation ledge structure |
| Keyword(6) | tungsten-metal |
| 1st Author's Name | Shoji YAMAHATA |
| 1st Author's Affiliation | NTT Photonics Laboratories, NTT Corporation() |
| 2nd Author's Name | Norihide KASHIO |
| 2nd Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| 3rd Author's Name | Kenji KURISHIMA |
| 3rd Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| 4th Author's Name | YoshinoYoshino K. FUKAI |
| 4th Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
| 5th Author's Name | Yasuyuki MIYAMOTO |
| 5th Author's Affiliation | Department of Physical Electronics, Tokyo Institute of Technology |
| Date | 2007/6/18 |
| Paper # | ED2007-69,SDM2007-74 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |