Presentation | 2007/6/18 Si Single-Electron FETs for Single-Photon Detection Michiharu TABE, Ratno NURYADI, Zainal BURHANUDIN, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have studied three research aspects as key technologies for breakthrough in Si devices, i.e., time-controlled transfer of individual electrons, detection of single-photons and single-dopants. In this paper, we will present our recent research results primarily on single-photon detection by multi-junction single-electron- or single-hole-tunneling devices. Although single-photon detection by single-electron devices is in the initial stage of basic research, it may open up a new field in post-scaling technologies, since the required voltage is much smaller than conventional avalanche photodiodes. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Si / single-electron device / single-electron transfer / single-photon detection / single-dopant |
Paper # | ED2007-80,SDM2007-85 |
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Committee | ED |
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Conference Date | 2007/6/18(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Electron Devices (ED) |
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Language | ENG |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Si Single-Electron FETs for Single-Photon Detection |
Sub Title (in English) | |
Keyword(1) | Si |
Keyword(2) | single-electron device |
Keyword(3) | single-electron transfer |
Keyword(4) | single-photon detection |
Keyword(5) | single-dopant |
1st Author's Name | Michiharu TABE |
1st Author's Affiliation | Research Institute of Electronics, Shizuoka University() |
2nd Author's Name | Ratno NURYADI |
2nd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
3rd Author's Name | Zainal BURHANUDIN |
3rd Author's Affiliation | Research Institute of Electronics, Shizuoka University |
Date | 2007/6/18 |
Paper # | ED2007-80,SDM2007-85 |
Volume (vol) | vol.107 |
Number (no) | 110 |
Page | pp.pp.- |
#Pages | 4 |
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