Presentation 2007/6/18
Si Single-Electron FETs for Single-Photon Detection
Michiharu TABE, Ratno NURYADI, Zainal BURHANUDIN,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have studied three research aspects as key technologies for breakthrough in Si devices, i.e., time-controlled transfer of individual electrons, detection of single-photons and single-dopants. In this paper, we will present our recent research results primarily on single-photon detection by multi-junction single-electron- or single-hole-tunneling devices. Although single-photon detection by single-electron devices is in the initial stage of basic research, it may open up a new field in post-scaling technologies, since the required voltage is much smaller than conventional avalanche photodiodes.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Si / single-electron device / single-electron transfer / single-photon detection / single-dopant
Paper # ED2007-80,SDM2007-85
Date of Issue

Conference Information
Committee ED
Conference Date 2007/6/18(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electron Devices (ED)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Si Single-Electron FETs for Single-Photon Detection
Sub Title (in English)
Keyword(1) Si
Keyword(2) single-electron device
Keyword(3) single-electron transfer
Keyword(4) single-photon detection
Keyword(5) single-dopant
1st Author's Name Michiharu TABE
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Ratno NURYADI
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Zainal BURHANUDIN
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 2007/6/18
Paper # ED2007-80,SDM2007-85
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 4
Date of Issue