| Presentation | 2007/6/18 AlGaN/GaN Power Transistors for power switching applications Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Tomohiro Murata, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recently developed normally-off transistor named GIT (Gate Injection Transistor) and novel passivation technique using poly-AlN to uniform the surface temperature will be reviewed. We have developed a normally-off AlGaN/GaN transistor using conductivity modulation named GIT (Gate Injection Transistor). This new device principle utilizes hole-injection from p-AlGaN to AlGaN/GaN hetero-junction which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to the conductivity modulation. The fabricated GIT on Si substrate exhibits the threshold voltage of +1.0V with high maximum drain current of 200mA/mm. The obtained on-state resistance (R_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Si substrate / normally-off / hole injection / conductivity modulation / high power switching |
| Paper # | ED2007-71,SDM2007-76 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlGaN/GaN Power Transistors for power switching applications |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Si substrate |
| Keyword(3) | normally-off |
| Keyword(4) | hole injection |
| Keyword(5) | conductivity modulation |
| Keyword(6) | high power switching |
| 1st Author's Name | Yasuhiro Uemoto |
| 1st Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | Masahiro Hikita |
| 2nd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | Hiroaki Ueno |
| 3rd Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 4th Author's Name | Tomohiro Murata |
| 4th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 5th Author's Name | Hisayoshi Matsuo |
| 5th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 6th Author's Name | Hidetoshi Ishida |
| 6th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 7th Author's Name | Manabu Yanagihara |
| 7th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 8th Author's Name | Tetsuzo Ueda |
| 8th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 9th Author's Name | Tsuyoshi Tanaka |
| 9th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| 10th Author's Name | Daisuke Ueda |
| 10th Author's Affiliation | Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd. |
| Date | 2007/6/18 |
| Paper # | ED2007-71,SDM2007-76 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |