Presentation 2007/6/18
Surface passivations of AlGaN/GaN HEMTs using Remote-mode PECVD
Jin Cherl Her, Hyun Jun Cho, Kwang Seok Seo,
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Abstract(in English) AlGaN/GaN HEMT has received much attention for high-frequency and high-power applications for its excellent material properties. The reduction of surface trap effects is one of the most important points of AlGaN/GaN HEMT fabrication. In recent years, excellent results using the SiN_x surface passivation and field-plate structures have been reported. Because of the field-plate located on the SiN_x, the film quality is very important. And the plasma sensitive AlGaN/GaN surface, the remote-mode SiN_x deposition can be useful for GaN-based devices passivation. For the ohmic contact, the high temperature (over 800℃) alloy process is commonly used and such process can damage or contaminate AlGaN/GaN surface. And 'the early surface passivation process' can enhance the AlGaN/GaN HEMT performances by reducing damage or contamination. So the deposition should be low damage process. In this paper, the SiN_x film using the remote-mode plasma enhanced chemical vapor deposition successfully deposited with low damage, high thermal-stability (up to 900℃). And the surface-trap related current collapse of the 0.4μm AlGaN/GaN HEMTs is effectively reduced.
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Keyword(in English) AlGaN/GaN HMET / passivation / current collapse / remote-mode plasma chemical vapor deposition
Paper # ED2007-67,SDM2007-72
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Committee ED
Conference Date 2007/6/18(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Surface passivations of AlGaN/GaN HEMTs using Remote-mode PECVD
Sub Title (in English)
Keyword(1) AlGaN/GaN HMET
Keyword(2) passivation
Keyword(3) current collapse
Keyword(4) remote-mode plasma chemical vapor deposition
1st Author's Name Jin Cherl Her
1st Author's Affiliation School of Electrical Engineering and Computer Science, Seoul National University()
2nd Author's Name Hyun Jun Cho
2nd Author's Affiliation School of Electrical Engineering and Computer Science, Seoul National University
3rd Author's Name Kwang Seok Seo
3rd Author's Affiliation School of Electrical Engineering and Computer Science, Seoul National University
Date 2007/6/18
Paper # ED2007-67,SDM2007-72
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 3
Date of Issue