Presentation 2007/6/18
Microwave dielectric properties of Mg_4Ta_2O_9 ceramics with TiO_2 for DRO
Jae-Sik Kim, Young-Hie Lee, Seon-Gi Bae, Ki-Won Ryu,
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Abstract(in English) In this study, the microwave dielectric properties of the Mg_4Ta_O_9 electroceramics with TiO_2 addition were investigated for dielectric resonator oscillator (DRO). All specimens were prepared by solid-state reaction method and sintered at 1450℃. From the XRD patterns, the Mg_4Ta_2O_9 phase existed in the Mg_4Ta_2O_9 ceramics doped with TiO_2 as a main phase and the MgTi_2O_5 phase was appeared by increasing of TiO_2 addition. The characteristic of the MgTi_2O_5 and TiO_2 phases had an effect on the microwave dielectric properties of the Mg_4Ta_2O_9 ceramics doped with TiO_2. There was excellent improvement in the temperature coefficient of resonant frequency (TCRF) by addition of 0.5-mole% TiO_2. However there was a little decrement of the quality factor from 116,800 GHz of non-doped Mg_4Ta_2O_9 ceramics to 102,100 GHz of 0.5-mole% TiO_2 doped one. The dielectric constant, quality factor and TCRF of the Mg_4Ta_2O_9 ceramics doped with 0.5-mole% TiO_2 sintered at 1450℃ for 10 hours were 14.83, 102,100 GHz and +3.46 ppm/℃. Advanced Design System (ADS), electro-magnetic simulation tool, was used for simulation and design for DR and DRO. The simulated DR with the Mg_4Ta_2O_9 ceramics doped with 0.5-mole% TiO_2 had the operating frequency of 11.97 GHz and S_<21> of-35.034 dB. The size of the manufactured DRO was 56×48×34 mm^3 and it was operated at 11.93 GHz. Power output and secondary harmonic of the manufactured DRO were +13.61 dBm and -23.81 dBc at 23.85 GHz, respectively.
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Keyword(in English) Microwave dielectric properties / Mg_4Ta_2O_9 / TiO_2 / DRO
Paper # ED2007-68,SDM2007-73
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Committee ED
Conference Date 2007/6/18(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
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Title (in English) Microwave dielectric properties of Mg_4Ta_2O_9 ceramics with TiO_2 for DRO
Sub Title (in English)
Keyword(1) Microwave dielectric properties
Keyword(2) Mg_4Ta_2O_9
Keyword(3) TiO_2
Keyword(4) DRO
1st Author's Name Jae-Sik Kim
1st Author's Affiliation Electronic Materials Engineering, Kwangwoon University()
2nd Author's Name Young-Hie Lee
2nd Author's Affiliation Electronic Materials Engineering, Kwangwoon University
3rd Author's Name Seon-Gi Bae
3rd Author's Affiliation Electric Engineering, Incheon Univertisy
4th Author's Name Ki-Won Ryu
4th Author's Affiliation Electronic Engineering, Yeojoo College
Date 2007/6/18
Paper # ED2007-68,SDM2007-73
Volume (vol) vol.107
Number (no) 110
Page pp.pp.-
#Pages 4
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