| Presentation | 2007/6/18 Design and Simulation of Single Hole Transistor with Tunneling Barrier formed by Fixed Charge Dong-Seup Lee, Sangwoo Kang, Joung-eob Lee, Byung-Gook Park, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Single Hole Transistor (SHT) with tunneling barrier formed by silicon-silicon nitride fixed charge is designed and simulated by device simulator (SILVACO). Electric Barrier formed by Fixed Charge (EBFC) is more advantageous in terms of room temperature operation than electric barrier induced through electrodes. This is because the capacitance between the quantum dot and barrier forming electrodes can be eliminated, leading to considerable increase in charging energy and hence increase in operation temperature. Gate bias dependence of SHT with EBFC is characterized using a device simulator. In addition, devices with different dimensional parameters, doping concentrations and materials are utilized to optimize the tunneling barrier. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Single Hole Transistor / Fixed Charge / Quantum Dot |
| Paper # | ED2007-83,SDM2007-88 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2007/6/18(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Design and Simulation of Single Hole Transistor with Tunneling Barrier formed by Fixed Charge |
| Sub Title (in English) | |
| Keyword(1) | Single Hole Transistor |
| Keyword(2) | Fixed Charge |
| Keyword(3) | Quantum Dot |
| 1st Author's Name | Dong-Seup Lee |
| 1st Author's Affiliation | Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University() |
| 2nd Author's Name | Sangwoo Kang |
| 2nd Author's Affiliation | Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University |
| 3rd Author's Name | Joung-eob Lee |
| 3rd Author's Affiliation | Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University |
| 4th Author's Name | Byung-Gook Park |
| 4th Author's Affiliation | Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University |
| Date | 2007/6/18 |
| Paper # | ED2007-83,SDM2007-88 |
| Volume (vol) | vol.107 |
| Number (no) | 110 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |